- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Gate Charge (Qg) (Max) @ Vgs :
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2 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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1,868
In-stock
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Infineon Technologies | MOSFET N-CH 30V 91A DPAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 115W (Tc) | N-Channel | - | 30V | 91A (Tc) | 9 mOhm @ 15A, 10V | 3V @ 250µA | 27nC @ 5V | 2672pF @ 16V | 4.5V, 10V | ±20V | ||||
VIEW |
3,449
In-stock
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Infineon Technologies | MOSFET N-CH 30V 90A D2PAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.1W (Ta), 120W (Tc) | N-Channel | - | 30V | 90A (Tc) | 9 mOhm @ 15A, 10V | 3V @ 250µA | 41nC @ 5V | 2672pF @ 16V | 4.5V, 10V | ±20V |