- Series :
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- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
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10 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
1,449
In-stock
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ON Semiconductor | MOSFET N-CH 30V 10.8A 8-SOIC | PowerTrench® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 30V | 10.8A (Ta) | 12 mOhm @ 10.8A, 10V | 3V @ 250µA | 22nC @ 5V | 1620pF @ 15V | 4.5V, 10V | ±20V | |||
|
VIEW |
2,958
In-stock
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Diodes Incorporated | MOSFET N-CH 30V 10.8A PWRDI8 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PowerDI5060-8 | 1.18W (Ta) | N-Channel | - | 30V | 10.8A (Ta) | 12 mOhm @ 20A, 10V | 2V @ 250µA | 25.1nC @ 10V | 1415pF @ 15V | 4.5V, 10V | ±20V | |||
|
VIEW |
2,521
In-stock
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Infineon Technologies | MOSFET N-CH 30V 10.8A 8-SOIC | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 30V | 10.8A (Ta) | 14 mOhm @ 15A, 4.5V | 3V @ 250µA | 26nC @ 5V | 1801pF @ 10V | 4.5V | ±20V | |||
|
VIEW |
3,512
In-stock
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Infineon Technologies | MOSFET N-CH 30V 10.8A 8-SOIC | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 30V | 10.8A (Ta) | 14 mOhm @ 15A, 4.5V | 3V @ 250µA | 26nC @ 5V | 1801pF @ 10V | 4.5V | ±20V | |||
|
VIEW |
3,662
In-stock
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Diodes Incorporated | MOSFET N-CH 30V 10.8A PWRDI8 | - | Discontinued at Digi-Key | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PowerDI5060-8 | 1.18W (Ta) | N-Channel | - | 30V | 10.8A (Ta) | 12 mOhm @ 20A, 10V | 2V @ 250µA | 25.1nC @ 10V | 1415pF @ 15V | 4.5V, 10V | ±20V | |||
|
VIEW |
3,211
In-stock
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Diodes Incorporated | MOSFET N-CH 30V 10.8A PWRDI8 | - | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PowerDI5060-8 | 1.18W (Ta) | N-Channel | - | 30V | 10.8A (Ta) | 12 mOhm @ 20A, 10V | 2V @ 250µA | 25.1nC @ 10V | 1415pF @ 15V | 4.5V, 10V | ±20V | |||
|
VIEW |
1,665
In-stock
|
Diodes Incorporated | MOSFET N-CH 30V 10.8A PWRDI8 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PowerDI5060-8 | 1.18W (Ta) | N-Channel | - | 30V | 10.8A (Ta) | 12 mOhm @ 20A, 10V | 2V @ 250µA | 25.1nC @ 10V | 1415pF @ 15V | 4.5V, 10V | ±20V | |||
|
VIEW |
3,242
In-stock
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Infineon Technologies | MOSFET N-CH 30V 10.8A 8-SOIC | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 30V | 10.8A (Ta) | 14 mOhm @ 15A, 4.5V | 3V @ 250µA | 26nC @ 5V | 1801pF @ 10V | 4.5V | ±20V | |||
|
VIEW |
2,941
In-stock
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Infineon Technologies | MOSFET N-CH 30V 10.8A 8-SOIC | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 30V | 10.8A (Ta) | 14 mOhm @ 15A, 4.5V | 3V @ 250µA | 26nC @ 5V | 1801pF @ 10V | 4.5V | ±20V | |||
|
VIEW |
1,355
In-stock
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Infineon Technologies | MOSFET N-CH 30V 10.8A 8-SOIC | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 30V | 10.8A (Ta) | 14 mOhm @ 15A, 4.5V | 3V @ 250µA | 26nC @ 5V | 1801pF @ 10V | 4.5V | ±20V |