- Part Status :
- Operating Temperature :
- Power Dissipation (Max) :
-
- 1.1W (Ta) (2)
- 1.56W (Ta) (3)
- 1.8W (Ta) (5)
- 2.1W (Ta), 35W (Tc) (3)
- 2.5W (Ta) (7)
- 2.5W (Ta), 35W (Tc) (3)
- 2.5W (Ta), 37.8W (Tc) (3)
- 2.5W (Ta), 5W (Tc) (3)
- 2.8W (Ta), 37W (Tc) (3)
- 29.8W (Tc) (1)
- 2W (Ta) (6)
- 3.9W (Ta), 29.8W (Tc) (3)
- 40W (Tc) (3)
- 5W (Ta), 26W (Tc) (1)
- 700mW (Ta), 27W (Tc) (2)
- 700mW (Ta), 30W (Tc) (10)
- FET Feature :
- Rds On (Max) @ Id, Vgs :
-
- 12 mOhm @ 25A, 10V (3)
- 30 mOhm @ 7A, 10V (4)
- 35 mOhm @ 3.7A, 10V (5)
- 35 mOhm @ 4.1A, 10V (6)
- 4.3 mOhm @ 20A, 10V (3)
- 4.7 mOhm @ 20A, 10V (1)
- 45 mOhm @ 3.7A, 10V (2)
- 7.6 mOhm @ 14A, 10V (3)
- 8 mOhm @ 11A, 10V (3)
- 8 mOhm @ 20A, 10V (3)
- 8 mOhm @ 30A, 10V (3)
- 8.3 mOhm @ 11A, 10V (9)
- 8.3 mOhm @ 14A, 10V (3)
- 9 mOhm @ 14A, 10V (3)
- 9.5 mOhm @ 10A, 10V (7)
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Applied Filters :
58 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GLOBAL STOCKS | ||||||||||||||||||||||||||
|
VIEW |
754
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 22A 8TSON | U-MOSVI-H | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 30W (Tc) | N-Channel | - | 30V | 22A (Ta) | 8 mOhm @ 11A, 10V | 2.3V @ 200µA | 27nC @ 10V | 2200pF @ 10V | 4.5V, 10V | ±20V | |||
|
VIEW |
1,912
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 22A 8TSON | U-MOSVI-H | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 27W (Tc) | N-Channel | - | 30V | 22A (Ta) | 8 mOhm @ 11A, 10V | 2.3V @ 200µA | 27nC @ 10V | 2200pF @ 10V | 4.5V, 10V | ±20V | |||
|
VIEW |
1,100
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 22A 8TSON | U-MOSVI-H | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 27W (Tc) | N-Channel | - | 30V | 22A (Ta) | 8 mOhm @ 11A, 10V | 2.3V @ 200µA | 27nC @ 10V | 2200pF @ 10V | 4.5V, 10V | ±20V | |||
|
VIEW |
3,370
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 7A 8-SOIC | HEXFET® | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 30V | 7A (Ta) | 30 mOhm @ 7A, 10V | 1V @ 250µA | 27nC @ 10V | 550pF @ 25V | 4.5V, 10V | ±20V | |||
|
VIEW |
3,699
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 5.8A 8-SOIC | FETKY™ | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2W (Ta) | N-Channel | Schottky Diode (Isolated) | 30V | 5.8A (Ta) | 35 mOhm @ 4.1A, 10V | 1V @ 250µA | 27nC @ 10V | 510pF @ 25V | 4.5V, 10V | ±20V | |||
|
VIEW |
1,128
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 20A PQFN | HEXFET® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VQFN Exposed Pad | PQFN (3x3) | 2.8W (Ta), 37W (Tc) | N-Channel | - | 30V | 20A (Ta), 40A (Tc) | 4.3 mOhm @ 20A, 10V | 2.35V @ 50µA | 27nC @ 10V | 1797pF @ 25V | 4.5V, 10V | ±20V | |||
|
VIEW |
2,345
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 20A PQFN | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VQFN Exposed Pad | PQFN (3x3) | 2.8W (Ta), 37W (Tc) | N-Channel | - | 30V | 20A (Ta), 40A (Tc) | 4.3 mOhm @ 20A, 10V | 2.35V @ 50µA | 27nC @ 10V | 1797pF @ 25V | 4.5V, 10V | ±20V | |||
|
VIEW |
3,736
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 20A PQFN | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VQFN Exposed Pad | PQFN (3x3) | 2.8W (Ta), 37W (Tc) | N-Channel | - | 30V | 20A (Ta), 40A (Tc) | 4.3 mOhm @ 20A, 10V | 2.35V @ 50µA | 27nC @ 10V | 1797pF @ 25V | 4.5V, 10V | ±20V | |||
|
VIEW |
3,657
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 7A 8-SOIC | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 30V | 7A (Ta) | 30 mOhm @ 7A, 10V | 1V @ 250µA | 27nC @ 10V | 550pF @ 25V | 4.5V, 10V | ±20V | |||
|
VIEW |
1,323
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 5.8A 8-SOIC | FETKY™ | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2W (Ta) | N-Channel | Schottky Diode (Isolated) | 30V | 5.8A (Ta) | 35 mOhm @ 4.1A, 10V | 1V @ 250µA | 27nC @ 10V | 510pF @ 25V | 4.5V, 10V | ±20V | |||
|
VIEW |
1,044
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 22A 8TSON | U-MOSV-H | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 30W (Tc) | N-Channel | - | 30V | 22A (Ta) | 8.3 mOhm @ 11A, 10V | 2.5V @ 1mA | 27nC @ 10V | 2500pF @ 10V | 4.5V, 10V | ±20V | |||
|
VIEW |
1,698
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 22A 8TSON | U-MOSV-H | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 30W (Tc) | N-Channel | - | 30V | 22A (Ta) | 8.3 mOhm @ 11A, 10V | 2.5V @ 1mA | 27nC @ 10V | 2500pF @ 10V | 4.5V, 10V | ±20V | |||
|
VIEW |
3,626
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 22A 8TSON | U-MOSV-H | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 30W (Tc) | N-Channel | - | 30V | 22A (Ta) | 8.3 mOhm @ 11A, 10V | 2.5V @ 1mA | 27nC @ 10V | 2500pF @ 10V | 4.5V, 10V | ±20V | |||
|
VIEW |
2,354
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 5.6A MICRO8 | HEXFET® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | Micro8™ | 1.8W (Ta) | N-Channel | - | 30V | 5.6A (Ta) | 35 mOhm @ 3.7A, 10V | 1V @ 250µA | 27nC @ 10V | 520pF @ 25V | 4.5V, 10V | ±20V | |||
|
VIEW |
1,689
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 5.6A MICRO8 | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | Micro8™ | 1.8W (Ta) | N-Channel | - | 30V | 5.6A (Ta) | 35 mOhm @ 3.7A, 10V | 1V @ 250µA | 27nC @ 10V | 520pF @ 25V | 4.5V, 10V | ±20V | |||
|
VIEW |
3,212
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 5.8A 8-SOIC | FETKY™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2W (Ta) | N-Channel | Schottky Diode (Isolated) | 30V | 5.8A (Ta) | 35 mOhm @ 4.1A, 10V | 1V @ 250µA | 27nC @ 10V | 510pF @ 25V | 4.5V, 10V | ±20V | |||
|
VIEW |
2,108
In-stock
|
Vishay Siliconix | MOSFET N-CH 30V 20A POWERPAKSO-8 | TrenchFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | 29.8W (Tc) | N-Channel | - | 30V | 20A (Tc) | 9.5 mOhm @ 10A, 10V | 2.2V @ 250µA | 27nC @ 10V | 985pF @ 15V | 4.5V, 10V | ±20V | |||
|
VIEW |
2,564
In-stock
|
ON Semiconductor | MOSFET N-CH 30V 50A ATPAK | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | ATPAK (2 leads+tab) | ATPAK | 40W (Tc) | N-Channel | - | 30V | 50A (Ta) | 12 mOhm @ 25A, 10V | - | 27nC @ 10V | 1650pF @ 10V | 4.5V, 10V | ±20V | |||
|
VIEW |
3,216
In-stock
|
ON Semiconductor | MOSFET N-CH 30V 50A ATPAK | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | ATPAK (2 leads+tab) | ATPAK | 40W (Tc) | N-Channel | - | 30V | 50A (Ta) | 12 mOhm @ 25A, 10V | - | 27nC @ 10V | 1650pF @ 10V | 4.5V, 10V | ±20V | |||
|
VIEW |
1,596
In-stock
|
ON Semiconductor | MOSFET N-CH 30V 50A ATPAK | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | ATPAK (2 leads+tab) | ATPAK | 40W (Tc) | N-Channel | - | 30V | 50A (Ta) | 12 mOhm @ 25A, 10V | - | 27nC @ 10V | 1650pF @ 10V | 4.5V, 10V | ±20V | |||
|
VIEW |
2,101
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 22A 8TSON | U-MOSV-H | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 30W (Tc) | N-Channel | - | 30V | 22A (Ta) | 8.3 mOhm @ 11A, 10V | 2.5V @ 1mA | 27nC @ 10V | 2500pF @ 10V | 4.5V, 10V | ±20V | |||
|
VIEW |
1,607
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 22A 8TSON | U-MOSV-H | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 30W (Tc) | N-Channel | - | 30V | 22A (Ta) | 8.3 mOhm @ 11A, 10V | 2.5V @ 1mA | 27nC @ 10V | 2500pF @ 10V | 4.5V, 10V | ±20V | |||
|
VIEW |
3,507
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 22A 8TSON | U-MOSV-H | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 30W (Tc) | N-Channel | - | 30V | 22A (Ta) | 8.3 mOhm @ 11A, 10V | 2.5V @ 1mA | 27nC @ 10V | 2500pF @ 10V | 4.5V, 10V | ±20V | |||
|
VIEW |
980
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 22A 8TSON | U-MOSV-H | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 30W (Tc) | N-Channel | - | 30V | 22A (Ta) | 8.3 mOhm @ 11A, 10V | 2.5V @ 1mA | 27nC @ 10V | 2500pF @ 10V | 4.5V, 10V | ±20V | |||
|
VIEW |
3,628
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 22A 8TSON | U-MOSV-H | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 30W (Tc) | N-Channel | - | 30V | 22A (Ta) | 8.3 mOhm @ 11A, 10V | 2.5V @ 1mA | 27nC @ 10V | 2500pF @ 10V | 4.5V, 10V | ±20V | |||
|
VIEW |
1,047
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 22A 8TSON | U-MOSV-H | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 30W (Tc) | N-Channel | - | 30V | 22A (Ta) | 8.3 mOhm @ 11A, 10V | 2.5V @ 1mA | 27nC @ 10V | 2500pF @ 10V | 4.5V, 10V | ±20V | |||
|
VIEW |
2,304
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 7A 8-SOIC | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 30V | 7A (Ta) | 30 mOhm @ 7A, 10V | 1V @ 250µA | 27nC @ 10V | 550pF @ 25V | 4.5V, 10V | ±20V | |||
|
VIEW |
1,211
In-stock
|
Alpha & Omega Semiconductor Inc. | MOSFET N-CH | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerSMD, Flat Leads | 8-DFN (5x6) | 5W (Ta), 26W (Tc) | N-Channel | - | 30V | 26A (Ta), 32A (Tc) | 4.7 mOhm @ 20A, 10V | 2.2V @ 250µA | 27nC @ 10V | 1320pF @ 15V | 4.5V, 10V | ±20V | |||
|
VIEW |
1,241
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 5.6A MICRO8 | HEXFET® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | Micro8™ | 1.8W (Ta) | N-Channel | - | 30V | 5.6A (Ta) | 35 mOhm @ 3.7A, 10V | 1V @ 250µA | 27nC @ 10V | 520pF @ 25V | 4.5V, 10V | ±20V | |||
|
VIEW |
1,204
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 5.6A MICRO8 | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | Micro8™ | 1.8W (Ta) | N-Channel | - | 30V | 5.6A (Ta) | 35 mOhm @ 3.7A, 10V | 1V @ 250µA | 27nC @ 10V | 520pF @ 25V | 4.5V, 10V | ±20V |