- Manufacture :
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- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
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2 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
924
In-stock
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Vishay Siliconix | MOSFET P-CHAN 30V SOT23 | Automotive, AEC-Q101, TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TO-236 (SOT-23) | 1.9W (Tc) | P-Channel | - | 30V | 2.5A (Tc) | 170 mOhm @ 1.8A, 10V | 2.5V @ 250µA | 6.8nC @ 10V | 210pF @ 25V | 4.5V, 10V | ±20V | ||||
VIEW |
1,059
In-stock
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Infineon Technologies | MOSFET N-CH 30V 3.2A 6-TSOP | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | Micro6™(TSOP-6) | 1.7W (Ta) | N-Channel | - | 30V | 3.2A (Ta) | 100 mOhm @ 2.2A, 10V | 1V @ 250µA | 9.6nC @ 10V | 210pF @ 25V | 4.5V, 10V | ±20V |