- Part Status :
- Packaging :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
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13 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
2,059
In-stock
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Torex Semiconductor Ltd | MOSFET N-CH 30V 4A SOT89 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-243AA | SOT-89 | 2W (Ta) | N-Channel | 30V | 4A (Ta) | 65 mOhm @ 2A, 10V | - | - | 270pF @ 10V | 4.5V, 10V | ±20V | |||
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VIEW |
2,093
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 30V 3A TSM | - | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TSM | 700mW (Ta) | N-Channel | 30V | 3A (Ta) | 71 mOhm @ 2A, 4V | - | 4.3nC @ 4V | 270pF @ 10V | 1.8V, 4V | ±12V | |||
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VIEW |
3,678
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 30V 3A TSM | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TSM | 700mW (Ta) | N-Channel | 30V | 3A (Ta) | 71 mOhm @ 2A, 4V | - | 4.3nC @ 4V | 270pF @ 10V | 1.8V, 4V | ±12V | |||
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|
VIEW |
2,533
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 30V 3A TSM | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TSM | 700mW (Ta) | N-Channel | 30V | 3A (Ta) | 71 mOhm @ 2A, 4V | - | 4.3nC @ 4V | 270pF @ 10V | 1.8V, 4V | ±12V | |||
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VIEW |
2,643
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 30V 4A TSM | - | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TSM | 700mW (Ta) | N-Channel | 30V | 4A (Ta) | 53 mOhm @ 3A, 10V | 1V @ 1mA | 4.3nC @ 4V | 270pF @ 10V | 1.8V, 10V | ±12V | |||
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|
VIEW |
3,588
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 30V 4A TSM | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TSM | 700mW (Ta) | N-Channel | 30V | 4A (Ta) | 53 mOhm @ 3A, 10V | 1V @ 1mA | 4.3nC @ 4V | 270pF @ 10V | 1.8V, 10V | ±12V | |||
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|
VIEW |
1,769
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 30V 4A TSM | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TSM | 700mW (Ta) | N-Channel | 30V | 4A (Ta) | 53 mOhm @ 3A, 10V | 1V @ 1mA | 4.3nC @ 4V | 270pF @ 10V | 1.8V, 10V | ±12V | |||
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VIEW |
3,270
In-stock
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Rohm Semiconductor | MOSFET N-CH 30V 2.5A TUMT3 | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 3-SMD, Flat Leads | TUMT3 | 800mW (Ta) | N-Channel | 30V | 2.5A (Ta) | 67 mOhm @ 2.5A, 4.5V | 1.5V @ 1mA | 5.2nC @ 4.5V | 270pF @ 10V | 2.5V, 4.5V | 12V | |||
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VIEW |
2,525
In-stock
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Rohm Semiconductor | MOSFET N-CH 30V 2.5A TUMT3 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 3-SMD, Flat Leads | TUMT3 | 800mW (Ta) | N-Channel | 30V | 2.5A (Ta) | 67 mOhm @ 2.5A, 4.5V | 1.5V @ 1mA | 5.2nC @ 4.5V | 270pF @ 10V | 2.5V, 4.5V | 12V | |||
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|
VIEW |
3,265
In-stock
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Rohm Semiconductor | MOSFET N-CH 30V 2.5A TUMT3 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 3-SMD, Flat Leads | TUMT3 | 800mW (Ta) | N-Channel | 30V | 2.5A (Ta) | 67 mOhm @ 2.5A, 4.5V | 1.5V @ 1mA | 5.2nC @ 4.5V | 270pF @ 10V | 2.5V, 4.5V | 12V | |||
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VIEW |
981
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 30V 2.3A ES6 | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | ES6 (1.6x1.6) | 500mW (Ta) | N-Channel | 30V | 2.3A (Ta) | 85 mOhm @ 1.5A, 4V | 1V @ 1mA | - | 270pF @ 10V | 1.8V, 4V | ±12V | |||
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VIEW |
2,197
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 30V 2.3A ES6 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | ES6 (1.6x1.6) | 500mW (Ta) | N-Channel | 30V | 2.3A (Ta) | 85 mOhm @ 1.5A, 4V | 1V @ 1mA | - | 270pF @ 10V | 1.8V, 4V | ±12V | |||
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VIEW |
3,929
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 30V 2.3A ES6 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | ES6 (1.6x1.6) | 500mW (Ta) | N-Channel | 30V | 2.3A (Ta) | 85 mOhm @ 1.5A, 4V | 1V @ 1mA | - | 270pF @ 10V | 1.8V, 4V | ±12V | |||
