- Series :
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- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
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12 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
3,023
In-stock
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STMicroelectronics | MOSFET P-CH 20V 2.5A 8-SOIC | STripFET™ II | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2W (Tc) | P-Channel | Schottky Diode (Isolated) | 20V | 2.5A (Tc) | 200 mOhm @ 1A, 4.5V | 600mV @ 250µA | 4.7nC @ 4.5V | 315pF @ 15V | 2.7V, 4.5V | ±12V | |||
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VIEW |
1,286
In-stock
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STMicroelectronics | MOSFET P-CH 20V 2.5A 8-SOIC | STripFET™ II | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2W (Tc) | P-Channel | Schottky Diode (Isolated) | 20V | 2.5A (Tc) | 200 mOhm @ 1A, 4.5V | 600mV @ 250µA | 4.7nC @ 4.5V | 315pF @ 15V | 2.7V, 4.5V | ±12V | |||
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VIEW |
1,460
In-stock
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STMicroelectronics | MOSFET P-CH 20V 2.2A SOT23-6 | STripFET™ II | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | SOT-23-6 | 1.6W (Tc) | P-Channel | - | 20V | 2.2A (Tc) | 200 mOhm @ 1A, 4.5V | 600mV @ 250µA | 4.7nC @ 4.5V | 315pF @ 15V | 2.7V, 4.5V | ±12V | |||
|
VIEW |
1,855
In-stock
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Toshiba Semiconductor and Storage | MOSFET P CH 20V 2.6A ES6 | U-MOSVI | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | ES6 | 500mW (Ta) | P-Channel | - | 20V | 2.6A (Ta) | 103 mOhm @ 1.5A, 4.5V | 1V @ 1mA | 4.7nC @ 4.5V | 290pF @ 10V | 1.5V, 4.5V | ±8V | |||
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VIEW |
1,141
In-stock
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Toshiba Semiconductor and Storage | MOSFET P CH 20V 2.6A ES6 | U-MOSVI | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | ES6 | 500mW (Ta) | P-Channel | - | 20V | 2.6A (Ta) | 103 mOhm @ 1.5A, 4.5V | 1V @ 1mA | 4.7nC @ 4.5V | 290pF @ 10V | 1.5V, 4.5V | ±8V | |||
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VIEW |
1,149
In-stock
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Toshiba Semiconductor and Storage | MOSFET P CH 20V 2.6A ES6 | U-MOSVI | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | ES6 | 500mW (Ta) | P-Channel | - | 20V | 2.6A (Ta) | 103 mOhm @ 1.5A, 4.5V | 1V @ 1mA | 4.7nC @ 4.5V | 290pF @ 10V | 1.5V, 4.5V | ±8V | |||
|
VIEW |
2,457
In-stock
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Texas Instruments | MOSFET P-CH 20V 48A 6SON | NexFET™ | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | - | 6-WDFN Exposed Pad | 6-WSON (2x2) | 2.9W (Ta) | P-Channel | - | 20V | 20A (Ta) | 23.9 mOhm @ 5A, 4.5V | 1.1V @ 250µA | 4.7nC @ 4.5V | 655pF @ 10V | 1.8V, 4.5V | ±8V | |||
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|
VIEW |
1,257
In-stock
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Texas Instruments | MOSFET P-CH 20V 48A 6SON | NexFET™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | - | 6-WDFN Exposed Pad | 6-WSON (2x2) | 2.9W (Ta) | P-Channel | - | 20V | 20A (Ta) | 23.9 mOhm @ 5A, 4.5V | 1.1V @ 250µA | 4.7nC @ 4.5V | 655pF @ 10V | 1.8V, 4.5V | ±8V | |||
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|
VIEW |
2,215
In-stock
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Texas Instruments | MOSFET P-CH 20V 48A 6SON | NexFET™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-WSON (2x2) | 2.9W (Ta) | P-Channel | - | 20V | 20A (Ta) | 23.9 mOhm @ 5A, 4.5V | 1.1V @ 250µA | 4.7nC @ 4.5V | 655pF @ 10V | 1.8V, 4.5V | ±8V | |||
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VIEW |
2,655
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 20V 2A CST3B | U-MOSVI | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 3-SMD, No Lead | CST3B | - | P-Channel | - | 20V | 2A (Ta) | 103 mOhm @ 1.5A, 4.5V | 1V @ 1mA | 4.7nC @ 4.5V | 290pF @ 10V | 1.5V, 4.5V | ±8V | |||
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VIEW |
2,079
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 20V 2A CST3B | U-MOSVI | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 3-SMD, No Lead | CST3B | - | P-Channel | - | 20V | 2A (Ta) | 103 mOhm @ 1.5A, 4.5V | 1V @ 1mA | 4.7nC @ 4.5V | 290pF @ 10V | 1.5V, 4.5V | ±8V | |||
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VIEW |
3,117
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 20V 2A CST3B | U-MOSVI | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 3-SMD, No Lead | CST3B | - | P-Channel | - | 20V | 2A (Ta) | 103 mOhm @ 1.5A, 4.5V | 1V @ 1mA | 4.7nC @ 4.5V | 290pF @ 10V | 1.5V, 4.5V | ±8V | |||
