- Series :
- Part Status :
- Operating Temperature :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
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6 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
1,447
In-stock
|
Toshiba Semiconductor and Storage | SMALL LOW ON RESISTANCE MOSFET | U-MOSVII | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-3 Flat Leads | SOT-23F | 1W (Ta) | P-Channel | - | 20V | 6A (Ta) | 30.1 mOhm @ 4A, 4.5V | 1V @ 1mA | 16.6nC @ 4.5V | 1030pF @ 10V | 1.8V, 4.5V | ±10V | ||||
VIEW |
830
In-stock
|
Central Semiconductor Corp | MOSFET P-CH 20V 2.3A SOT-23F | - | Last Time Buy | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 Flat Leads | SOT-23F | 350mW (Ta) | P-Channel | - | 20V | 2.3A (Ta) | 88 mOhm @ 1.2A, 5V | 1.4V @ 250µA | 12nC @ 5V | 800pF @ 10V | 2.5V, 5V | 12V | ||||
VIEW |
1,851
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 20V 6A SOT23F | U-MOSVI | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-3 Flat Leads | SOT-23F | 1W (Ta) | P-Channel | - | 20V | 6A (Ta) | 29.8 mOhm @ 3A, 4.5V | 1V @ 1mA | 12.8nC @ 4.5V | 840pF @ 10V | 1.5V, 4.5V | ±8V | ||||
VIEW |
3,375
In-stock
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Toshiba Semiconductor and Storage | MOSFET P CH 20V 4A SOT-23F | U-MOSVI | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-3 Flat Leads | SOT-23F | 1W (Ta) | P-Channel | - | 20V | 4A (Ta) | 55 mOhm @ 3A, 4.5V | 1V @ 1mA | 10.4nC @ 4.5V | 630pF @ 10V | 1.5V, 4.5V | ±8V | ||||
VIEW |
2,868
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 20V 6A SOT23F | U-MOSVI | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-3 Flat Leads | SOT-23F | 1W (Ta) | P-Channel | - | 20V | 3.9A (Ta) | 93 mOhm @ 1.5A, 4.5V | 1V @ 1mA | 4.6nC @ 4.5V | 290pF @ 10V | 1.5V, 4.5V | ±8V | ||||
VIEW |
2,455
In-stock
|
Toshiba Semiconductor and Storage | SMALL LOW ON RESISTANCE MOSFET | U-MOSVII | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-3 Flat Leads | SOT-23F | 1W (Ta) | P-Channel | - | 20V | 6A (Ta) | 22.1 mOhm @ 6A, 8V | 1V @ 1mA | 38.5nC @ 8V | 1331pF @ 10V | 1.8V, 8V | ±10V |