Supplier Device Package :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
SSM6J414TU,LF
RFQ
VIEW
RFQ
1,149
In-stock
Toshiba Semiconductor and Storage MOSFET P CH 20V 6A UF6 U-MOSVI Active Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 6-SMD, Flat Leads UF6 1W (Ta) P-Channel 20V 6A (Ta) 22.5 mOhm @ 6A, 4.5V 1V @ 1mA 23.1nC @ 4.5V 1650pF @ 10V 1.5V, 4.5V ±8V
SSM6J414TU,LF
RFQ
VIEW
RFQ
727
In-stock
Toshiba Semiconductor and Storage MOSFET P CH 20V 6A UF6 U-MOSVI Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 6-SMD, Flat Leads UF6 1W (Ta) P-Channel 20V 6A (Ta) 22.5 mOhm @ 6A, 4.5V 1V @ 1mA 23.1nC @ 4.5V 1650pF @ 10V 1.5V, 4.5V ±8V
SSM6J414TU,LF
RFQ
VIEW
RFQ
3,829
In-stock
Toshiba Semiconductor and Storage MOSFET P CH 20V 6A UF6 U-MOSVI Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 6-SMD, Flat Leads UF6 1W (Ta) P-Channel 20V 6A (Ta) 22.5 mOhm @ 6A, 4.5V 1V @ 1mA 23.1nC @ 4.5V 1650pF @ 10V 1.5V, 4.5V ±8V
RF6C055BCTCR
RFQ
VIEW
RFQ
845
In-stock
Rohm Semiconductor MOSFET P-CHANNEL 20V 5.5A TUMT6 - Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-SMD, Flat Leads TUMT6 1W (Tc) P-Channel 20V 5.5A (Ta) 25.8 mOhm @ 5.5A, 4.5V 1.2V @ 1mA 15.2nC @ 4.5V 1080pF @ 10V 4.5V ±8V
RF6C055BCTCR
RFQ
VIEW
RFQ
3,196
In-stock
Rohm Semiconductor MOSFET P-CHANNEL 20V 5.5A TUMT6 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-SMD, Flat Leads TUMT6 1W (Tc) P-Channel 20V 5.5A (Ta) 25.8 mOhm @ 5.5A, 4.5V 1.2V @ 1mA 15.2nC @ 4.5V 1080pF @ 10V 4.5V ±8V
RF6C055BCTCR
RFQ
VIEW
RFQ
910
In-stock
Rohm Semiconductor MOSFET P-CHANNEL 20V 5.5A TUMT6 - Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-SMD, Flat Leads TUMT6 1W (Tc) P-Channel 20V 5.5A (Ta) 25.8 mOhm @ 5.5A, 4.5V 1.2V @ 1mA 15.2nC @ 4.5V 1080pF @ 10V 4.5V ±8V