Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IPB050N06NGATMA1
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2,190
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Infineon Technologies MOSFET N-CH 60V 100A TO-263 OptiMOS™ Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263AB) 300W (Tc) N-Channel - 60V 100A (Tc) 4.7 mOhm @ 100A, 10V 4V @ 270µA 167nC @ 10V 6100pF @ 30V 10V ±20V
IPB180N08S402ATMA1
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2,262
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Infineon Technologies MOSFET N-CH TO263-7 Automotive, AEC-Q101, OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-7, D²Pak (6 Leads + Tab) PG-TO263-7-3 277W (Tc) N-Channel - 80V 180A (Tc) 2.2 mOhm @ 100A, 10V 4V @ 220µA 167nC @ 10V 11550pF @ 25V 10V ±20V
FDB016N04AL7
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1,176
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ON Semiconductor MOSFET N-CH 40V 160A D2PAK-7 PowerTrench® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-7, D²Pak (6 Leads + Tab) D²PAK (TO-263) 283W (Tc) N-Channel - 40V 160A (Tc) 1.6 mOhm @ 80A, 10V 3V @ 250µA 167nC @ 10V 11600pF @ 25V 10V ±20V
SI4143DY-T1-GE3
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1,467
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Vishay Siliconix MOSFET P-CHANNEL 30V 25.3A 8SO TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TA) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 6W (Tc) P-Channel - 30V 25.3A (Tc) 6.2 mOhm @ 12A, 10V 2.5V @ 250µA 167nC @ 10V 6630pF @ 15V 4.5V, 10V ±25V