- Manufacture :
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- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
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3 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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3,452
In-stock
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NXP USA Inc. | MOSFET N-CH 55V 61A D2PAK | TrenchMOS™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 136W (Tc) | N-Channel | - | 55V | 61A (Tc) | 16 mOhm @ 25A, 10V | 2V @ 1mA | 34nC @ 5V | 2210pF @ 25V | 4.5V, 10V | ±15V | |||
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VIEW |
709
In-stock
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Infineon Technologies | MOSFET N-CH 100V 61A D2PAK | HEXFET® | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 140W (Tc) | N-Channel | - | 100V | 61A (Tc) | 13.9 mOhm @ 37A, 10V | 4V @ 100µA | 87nC @ 10V | 3180pF @ 50V | 10V | ±20V | |||
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VIEW |
2,485
In-stock
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STMicroelectronics | MOSFET N-CH 200V 61A D2PAK | MDmesh™ V | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 190W (Tc) | N-Channel | - | 200V | 61A (Tc) | 23 mOhm @ 30.5A, 10V | 5V @ 250µA | 104nC @ 10V | 4329pF @ 50V | 10V | ±25V |