Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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BUK9618-55A,118
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3,452
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NXP USA Inc. MOSFET N-CH 55V 61A D2PAK TrenchMOS™ Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 136W (Tc) N-Channel - 55V 61A (Tc) 16 mOhm @ 25A, 10V 2V @ 1mA 34nC @ 5V 2210pF @ 25V 4.5V, 10V ±15V
IRFS4510TRLPBF
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709
In-stock
Infineon Technologies MOSFET N-CH 100V 61A D2PAK HEXFET® Discontinued at Digi-Key Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 140W (Tc) N-Channel - 100V 61A (Tc) 13.9 mOhm @ 37A, 10V 4V @ 100µA 87nC @ 10V 3180pF @ 50V 10V ±20V
STB80N20M5
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2,485
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STMicroelectronics MOSFET N-CH 200V 61A D2PAK MDmesh™ V Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 190W (Tc) N-Channel - 200V 61A (Tc) 23 mOhm @ 30.5A, 10V 5V @ 250µA 104nC @ 10V 4329pF @ 50V 10V ±25V