- Manufacture :
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- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
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3 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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2,940
In-stock
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STMicroelectronics | MOSFET N-CH 650V 10A D2PAK | SuperMESH3™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 150W (Tc) | N-Channel | - | 650V | 10A (Tc) | 1 Ohm @ 3.6A, 10V | 4.5V @ 100µA | 42nC @ 10V | 1180pF @ 25V | 10V | ±30V | ||||
VIEW |
2,133
In-stock
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Infineon Technologies | MOSFET N-CH 650V 29A HSOF-8 | CoolMOS™ G7 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | 8-PowerSFN | PG-HSOF-8 | 167W (Tc) | N-Channel | - | 650V | 29A (Tc) | 80 mOhm @ 9.7A, 10V | 4V @ 490µA | 42nC @ 10V | 1640pF @ 400V | 10V | ±20V | ||||
VIEW |
2,281
In-stock
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Infineon Technologies | MOSFET N-CH 650V 22A TO263-3 | CoolMOS™ C7 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-4, D²Pak (3 Leads + Tab), TO-263AA | PG-TO263-3 | 110W (Tc) | N-Channel | - | 650V | 22A (Tc) | 99 mOhm @ 9.7A, 10V | 4V @ 490µA | 42nC @ 10V | 1819pF @ 400V | 10V | ±20V |