Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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NDC632P
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1,254
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ON Semiconductor MOSFET P-CH 20V 2.7A SSOT-6 - Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-23-6 Thin, TSOT-23-6 SuperSOT™-6 1.6W (Ta) P-Channel - 20V 2.7A (Ta) 140 mOhm @ 2.7A, 4.5V 1V @ 250µA 15nC @ 4.5V 550pF @ 10V 2.7V, 4.5V -8V
FDC636P
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RFQ
1,079
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ON Semiconductor MOSFET P-CH 20V 2.8A SSOT-6 - Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-23-6 Thin, TSOT-23-6 SuperSOT™-6 1.6W (Ta) P-Channel - 20V 2.8A (Ta) 130 mOhm @ 2.8A, 4.5V 1V @ 250µA 8.5nC @ 4.5V 390pF @ 10V 2.5V, 4.5V ±8V
FDC633N
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RFQ
1,380
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ON Semiconductor MOSFET N-CH 30V 5.2A SSOT-6 - Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-23-6 Thin, TSOT-23-6 SuperSOT™-6 1.6W (Ta) N-Channel - 30V 5.2A (Ta) 42 mOhm @ 5.2A, 4.5V 1V @ 250µA 16nC @ 4.5V 538pF @ 10V 2.5V, 4.5V ±8V
SSM6K781G,LF
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RFQ
2,660
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Toshiba Semiconductor and Storage MOSFET N-CH 12V 7A 6WCSP6C U-MOSVII-H Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 6-UFBGA, WLCSP 6-WCSPC (1.5x1.0) 1.6W (Ta) N-Channel - 12V 7A (Ta) 18 mOhm @ 1.5A, 4.5V 1V @ 250µA 5.4nC @ 4.5V 600pF @ 6V 1.5V, 4.5V ±8V