Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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DMNH10H028SPSQ-13
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3,263
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Diodes Incorporated MOSFET N-CH 100V 40A POWERDI506 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount 8-PowerTDFN PowerDI5060-8 1.6W (Ta) N-Channel - 100V 40A (Tc) 28 mOhm @ 20A, 10V 4V @ 250µA 36nC @ 10V 2245pF @ 50V 10V ±20V
TP2510N8-G
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RFQ
2,401
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Microchip Technology MOSFET P-CH 100V 0.48A SOT89-3 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-243AA TO-243AA (SOT-89) 1.6W (Ta) P-Channel - 100V 480mA (Tj) 3.5 Ohm @ 750mA, 10V 2.4V @ 1mA - 125pF @ 25V 10V ±20V
FDC8601
RFQ
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RFQ
3,672
In-stock
ON Semiconductor MOSFET N-CH 100V TRENCH SSOT-6 PowerTrench® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-23-6 Thin, TSOT-23-6 6-SSOT 1.6W (Ta) N-Channel - 100V 2.7A (Ta) 109 mOhm @ 2.7A, 10V 4V @ 250µA 5nC @ 10V 210pF @ 50V 6V, 10V ±20V
DMNH10H028SPS-13
RFQ
VIEW
RFQ
2,438
In-stock
Diodes Incorporated MOSFET N-CH 100V 40A POWERDI - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount 8-PowerTDFN PowerDI5060-8 1.6W (Ta) N-Channel - 100V 40A (Tc) 28 mOhm @ 20A, 10V 4V @ 250µA 36nC @ 10V 2245pF @ 50V 10V ±20V
TN2510N8-G
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RFQ
1,339
In-stock
Microchip Technology MOSFET N-CH 100V 730MA SOT89-3 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-243AA TO-243AA (SOT-89) 1.6W (Ta) N-Channel - 100V 730mA (Tj) 1.5 Ohm @ 750mA, 10V 2V @ 1mA - 125pF @ 25V 3V, 10V ±20V
FDC3612
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RFQ
3,847
In-stock
ON Semiconductor MOSFET N-CH 100V 2.6A SSOT-6 PowerTrench® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-23-6 Thin, TSOT-23-6 SuperSOT™-6 1.6W (Ta) N-Channel - 100V 2.6A (Ta) 125 mOhm @ 2.6A, 10V 4V @ 250µA 20nC @ 10V 660pF @ 50V 6V, 10V ±20V