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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	TK16A55D(STA4,Q,M)	RFQ VIEW	PDF RFQ	958 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 550V 16A TO-220SIS		π-MOSVII	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220SIS	-	N-Channel	-	550V	16A (Ta)	330 mOhm @ 8A, 10V	4V @ 1mA	45nC @ 10V	2600pF @ 25V	-	-
	TK19A45D(STA4,Q,M)	RFQ VIEW	PDF RFQ	1,654 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 450V 19A TO-220SIS		π-MOSVII	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220SIS	50W (Tc)	N-Channel	-	450V	19A (Ta)	250 mOhm @ 9.5A, 10V	4V @ 1mA	45nC @ 10V	2600pF @ 25V	10V	±30V
	TK18A50D(STA4,Q,M)	RFQ VIEW	PDF RFQ	2,310 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 500V 18A TO-220SIS		π-MOSVII	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220SIS	50W (Tc)	N-Channel	-	500V	18A (Ta)	270 mOhm @ 9A, 10V	4V @ 1mA	45nC @ 10V	2600pF @ 25V	10V	±30V
	TK15A60D(STA4,Q,M)	RFQ VIEW	PDF RFQ	2,070 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 15A TO-220SIS		π-MOSVII	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220SIS	50W (Tc)	N-Channel	-	600V	15A (Ta)	370 mOhm @ 7.5A, 10V	4V @ 1mA	45nC @ 10V	2600pF @ 25V	10V	±30V

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