Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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AOT15S60L
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RFQ
3,610
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Alpha & Omega Semiconductor Inc. MOSFET N-CH 600V 15A TO220 aMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 208W (Tc) N-Channel - 600V 15A (Tc) 290 mOhm @ 7.5A, 10V 3.8V @ 250µA 15.6nC @ 10V 372pF @ 100V 10V ±30V
SIHP15N60E-E3
RFQ
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RFQ
2,832
In-stock
Vishay Siliconix MOSFET N-CH 600V 15A TO220AB - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 180W (Tc) N-Channel - 600V 15A (Tc) 280 mOhm @ 8A, 10V 4V @ 250µA 78nC @ 10V 1350pF @ 100V 10V ±30V
FCP260N60E
RFQ
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RFQ
2,657
In-stock
ON Semiconductor MOSFET N CH 600V 15A TO-220 SuperFET® II Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 156W (Tc) N-Channel - 600V 15A (Tc) 260 mOhm @ 7.5A, 10V 3.5V @ 250µA 62nC @ 10V 2500pF @ 25V 10V ±20V
SIHP15N60E-GE3
RFQ
VIEW
RFQ
1,626
In-stock
Vishay Siliconix MOSFET N-CH 600V 15A TO220AB E Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 180W (Tc) N-Channel - 600V 15A (Tc) 280 mOhm @ 8A, 10V 4V @ 250µA 78nC @ 10V 1350pF @ 100V 10V ±30V