- Power Dissipation (Max) :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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2 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
3,013
In-stock
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Alpha & Omega Semiconductor Inc. | MOSFET N-CH 600V 15A TO262F | aMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Full Pack, I²Pak | 27.8W (Tc) | N-Channel | - | 600V | 15A (Tc) | 290 mOhm @ 7.5A, 10V | 3.8V @ 250µA | 15.6nC @ 10V | 717pF @ 100V | 10V | ±30V | |||
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|
VIEW |
2,684
In-stock
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Alpha & Omega Semiconductor Inc. | MOSFET N-CH 650V 15A TO262F | aMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Full Pack, I²Pak | 28W (Tc) | N-Channel | - | 650V | 15A (Tc) | 290 mOhm @ 7.5A, 10V | 4V @ 250µA | 17.2nC @ 10V | 841pF @ 100V | 10V | ±30V | |||
