Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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Infineon Technologies HIGH POWER_NEW OptiMOS™ Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 PG-TO247-3 178W (Tc) N-Channel 600V 38A (Tc) 55 mOhm @ 18A, 10V 4.5V @ 900µA 79nC @ 10V 3194pF @ 400V 10V ±20V
APT38N60BC6
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Microsemi Corporation MOSFET N-CH 600V 38A TO-247 CoolMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 [B] 278W (Tc) N-Channel 600V 38A (Tc) 99 mOhm @ 18A, 10V 3.5V @ 1.2mA 112nC @ 10V 2826pF @ 25V 10V ±20V
TSM60NB099PW C1G
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3,313
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Taiwan Semiconductor Corporation MOSFET N-CHANNEL 600V 38A TO247 - Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 329W (Tc) N-Channel 600V 38A (Tc) 99 mOhm @ 11.7A, 10V 4V @ 250µA 62nC @ 10V 2587pF @ 100V 10V ±30V