Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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STFI34NM60N
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3,676
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STMicroelectronics MOSFET N-CH 600V 29A I2PAK FP MDmesh™ II Obsolete Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-262-3 Full Pack, I²Pak I2PAKFP (TO-281) 40W (Tc) N-Channel - 600V 29A (Tc) 105 mOhm @ 14.5A, 10V 4V @ 250µA 84nC @ 10V 2722pF @ 100V 10V ±25V
STFI13NM60N
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1,692
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STMicroelectronics MOSFET N-CH 600V 11A I2PAK FP MDmesh™ II Obsolete Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-262-3 Full Pack, I²Pak I2PAKFP (TO-281) 25W (Tc) N-Channel - 600V 11A (Tc) 360 mOhm @ 5.5A, 10V 4V @ 250µA 30nC @ 10V 790pF @ 50V 10V ±25V
STFI28N60M2
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3,297
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STMicroelectronics MOSFET N-CH 600V 22A I2PAK-FP MDmesh™ II Plus Obsolete Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-262-3 Full Pack, I²Pak I2PAKFP (TO-281) 30W (Tc) N-Channel - 600V 22A (Tc) 150 mOhm @ 11A, 10V 4V @ 250µA 36nC @ 10V 1440pF @ 100V 10V ±25V
STFI26NM60N
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3,575
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STMicroelectronics MOSFET N-CH 600V 20A I2PAK FP MDmesh™ II Obsolete Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-262-3 Full Pack, I²Pak I2PAKFP (TO-281) 35W (Tc) N-Channel - 600V 20A (Tc) 165 mOhm @ 10A, 10V 4V @ 250µA 60nC @ 10V 1800pF @ 50V 10V ±25V