- Manufacture :
- Technology :
- Operating Temperature :
- Package / Case :
- Supplier Device Package :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
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- Input Capacitance (Ciss) (Max) @ Vds :
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2 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
3,534
In-stock
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EPC | TRANS GAN 300V 4A BUMPED DIE | eGaN® | Active | Tray | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die Outline (12-Solder Bar) | - | N-Channel | 300V | 4A (Ta) | 150 mOhm @ 3A, 5V | 2.5V @ 1mA | 1.85nC @ 5V | 194pF @ 240V | 5V | +6V, -4V | ||||
VIEW |
2,173
In-stock
|
MICROSS/On Semiconductor | MOSFET P-CH 50V 130MA DIE | - | Active | Tray | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 | 360mW (Ta) | P-Channel | 50V | 130mA (Ta) | 10 Ohm @ 100mA, 5V | 2V @ 1mA | 1.3nC @ 5V | 73pF @ 25V | 5V | ±20V |