Drive Voltage (Max Rds On, Min Rds On) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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3,075
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IXYS MOSFET N-CH 100V 690A MODULE HiPerFET™ Active Bulk MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Chassis Mount Y3-DCB Y3-DCB 2500W (Tc) N-Channel - 100V 690A (Tc) 1.8 mOhm @ 500mA, 10V 6V @ 130mA 2300nC @ 10V 59000pF @ 25V 10V ±20V
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963
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IXYS MOSFET N-CH 100V 590A Y3-DCB HiPerFET™ Active Bulk MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Chassis Mount Y3-DCB Y3-DCB 2200W (Tc) N-Channel - 100V 590A (Tc) 2.1 mOhm @ 500mA, 10V 6V @ 110mA 2000nC @ 10V 50000pF @ 25V 10V ±20V
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3,571
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Microsemi Corporation MOSFET N-CH 100V 570A SP6 - Active Bulk MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Chassis Mount SP6 SP6 1660W (Tc) N-Channel - 100V 570A (Tc) 2.5 mOhm @ 200A, 10V 4V @ 10mA 1360nC @ 10V 40000pF @ 25V 10V ±30V
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3,266
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Microsemi Corporation MOSFET N-CH 100V 495A SP6 - Active Bulk MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Chassis Mount SP6 SP6 1250W (Tc) N-Channel - 100V 495A (Tc) 2.5 mOhm @ 200A, 10V 4V @ 10mA 1360nC @ 10V 40000pF @ 25V 10V ±30V
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1,660
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Microsemi Corporation MOSFET N-CH 100V 495A SP6 - Active Bulk MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Chassis Mount SP6 SP6 1250W (Tc) N-Channel - 100V 495A (Tc) 2.5 mOhm @ 200A, 10V 4V @ 10mA 1360nC @ 10V 40000pF @ 25V 10V ±30V
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1,462
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Microsemi Corporation MOSFET N-CH 100V 278A SP4 - Active Bulk MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Chassis Mount SP4 SP4 780W (Tc) N-Channel - 100V 278A (Tc) 5 mOhm @ 125A, 10V 4V @ 5mA 700nC @ 10V 20000pF @ 25V 10V ±30V
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3,789
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Microsemi Corporation MOSFET N-CH 100V 278A SP4 - Active Bulk MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Chassis Mount SP4 SP4 780W (Tc) N-Channel - 100V 278A (Tc) 5 mOhm @ 125A, 10V 4V @ 5mA 700nC @ 10V 20000pF @ 25V 10V ±30V
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Infineon Technologies MOSFET N-CH 100V 4.2A DIRECTFET HEXFET® Active Digi-Reel® MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Surface Mount DirectFET™ Isometric SH DIRECTFET™ SH 2.2W (Ta), 42W (Tc) N-Channel - 100V 4.2A (Ta), 19A (Tc) 62 mOhm @ 5A, 10V 5V @ 250µA 13nC @ 10V 530pF @ 25V 10V ±20V
IRF6665TRPBF
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770
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Infineon Technologies MOSFET N-CH 100V 4.2A DIRECTFET HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Surface Mount DirectFET™ Isometric SH DIRECTFET™ SH 2.2W (Ta), 42W (Tc) N-Channel - 100V 4.2A (Ta), 19A (Tc) 62 mOhm @ 5A, 10V 5V @ 250µA 13nC @ 10V 530pF @ 25V 10V ±20V
IRF6665TRPBF
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1,499
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Infineon Technologies MOSFET N-CH 100V 4.2A DIRECTFET HEXFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Surface Mount DirectFET™ Isometric SH DIRECTFET™ SH 2.2W (Ta), 42W (Tc) N-Channel - 100V 4.2A (Ta), 19A (Tc) 62 mOhm @ 5A, 10V 5V @ 250µA 13nC @ 10V 530pF @ 25V 10V ±20V
BSB056N10NN3GXUMA1
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1,939
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Infineon Technologies MOSFET N-CH 100V 9A WDSON-2 OptiMOS™ Active Digi-Reel® MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Surface Mount 3-WDSON MG-WDSON-2, CanPAK M™ 2.8W (Ta), 78W (Tc) N-Channel - 100V 9A (Ta), 83A (Tc) 5.6 mOhm @ 30A, 10V 3.5V @ 100µA 74nC @ 10V 5500pF @ 50V 6V, 10V ±20V
BSB056N10NN3GXUMA1
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2,378
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Infineon Technologies MOSFET N-CH 100V 9A WDSON-2 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Surface Mount 3-WDSON MG-WDSON-2, CanPAK M™ 2.8W (Ta), 78W (Tc) N-Channel - 100V 9A (Ta), 83A (Tc) 5.6 mOhm @ 30A, 10V 3.5V @ 100µA 74nC @ 10V 5500pF @ 50V 6V, 10V ±20V
BSB056N10NN3GXUMA1
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1,561
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Infineon Technologies MOSFET N-CH 100V 9A WDSON-2 OptiMOS™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Surface Mount 3-WDSON MG-WDSON-2, CanPAK M™ 2.8W (Ta), 78W (Tc) N-Channel - 100V 9A (Ta), 83A (Tc) 5.6 mOhm @ 30A, 10V 3.5V @ 100µA 74nC @ 10V 5500pF @ 50V 6V, 10V ±20V
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Infineon Technologies MOSFET N-CH 100V 10.3A DIRECTFET HEXFET® Active Digi-Reel® MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Surface Mount DirectFET™ Isometric MN DIRECTFET™ MN 2.8W (Ta), 89W (Tc) N-Channel - 100V 10.3A (Ta), 60A (Tc) 13 mOhm @ 10.3A, 10V 4.8V @ 150µA 47nC @ 10V 2210pF @ 25V 10V ±20V
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3,653
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Infineon Technologies MOSFET N-CH 100V 10.3A DIRECTFET HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Surface Mount DirectFET™ Isometric MN DIRECTFET™ MN 2.8W (Ta), 89W (Tc) N-Channel - 100V 10.3A (Ta), 60A (Tc) 13 mOhm @ 10.3A, 10V 4.8V @ 150µA 47nC @ 10V 2210pF @ 25V 10V ±20V
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3,180
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Infineon Technologies MOSFET N-CH 100V 10.3A DIRECTFET HEXFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Surface Mount DirectFET™ Isometric MN DIRECTFET™ MN 2.8W (Ta), 89W (Tc) N-Channel - 100V 10.3A (Ta), 60A (Tc) 13 mOhm @ 10.3A, 10V 4.8V @ 150µA 47nC @ 10V 2210pF @ 25V 10V ±20V
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2,059
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Microsemi Corporation MOSFET N-CH 100V 860A SP6 - Active Bulk MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Chassis Mount SP6 SP6 2500W (Tc) N-Channel - 100V 860A (Tc) 1.6 mOhm @ 275A, 10V 4V @ 12mA 2100nC @ 10V 60000pF @ 25V 10V ±30V
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Infineon Technologies MOSFET N-CH 100V 8.3A DIRECTFET HEXFET® Active Digi-Reel® MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Surface Mount DirectFET™ Isometric MZ DIRECTFET™ MZ 2.8W (Ta), 89W (Tc) N-Channel - 100V 8.3A (Ta), 47A (Tc) 22 mOhm @ 8.2A, 10V 4.9V @ 100µA 31nC @ 10V 1360pF @ 25V 10V ±20V
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3,636
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Infineon Technologies MOSFET N-CH 100V 8.3A DIRECTFET HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Surface Mount DirectFET™ Isometric MZ DIRECTFET™ MZ 2.8W (Ta), 89W (Tc) N-Channel - 100V 8.3A (Ta), 47A (Tc) 22 mOhm @ 8.2A, 10V 4.9V @ 100µA 31nC @ 10V 1360pF @ 25V 10V ±20V
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3,322
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Infineon Technologies MOSFET N-CH 100V 8.3A DIRECTFET HEXFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Surface Mount DirectFET™ Isometric MZ DIRECTFET™ MZ 2.8W (Ta), 89W (Tc) N-Channel - 100V 8.3A (Ta), 47A (Tc) 22 mOhm @ 8.2A, 10V 4.9V @ 100µA 31nC @ 10V 1360pF @ 25V 10V ±20V
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1,380
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Infineon Technologies MOSFET N-CH 100V 9A WDSON-2 OptiMOS™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Surface Mount 3-WDSON MG-WDSON-2, CanPAK M™ 2.2W (Ta), 43W (Tc) N-Channel - 100V 9A (Ta), 40A (Tc) 13.4 mOhm @ 30A, 10V 3.5V @ 40µA 30nC @ 10V 2300pF @ 50V 6V, 10V ±20V
IRF6645TRPBF
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1,027
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Infineon Technologies MOSFET N-CH 100V 5.7A DIRECTFET HEXFET® Active Digi-Reel® MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Surface Mount DirectFET™ Isometric SJ DIRECTFET™ SJ 2.2W (Ta), 42W (Tc) N-Channel - 100V 5.7A (Ta), 25A (Tc) 35 mOhm @ 5.7A, 10V 4.9V @ 50µA 20nC @ 10V 890pF @ 25V 10V ±20V
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1,227
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Infineon Technologies MOSFET N-CH 100V 5.7A DIRECTFET HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Surface Mount DirectFET™ Isometric SJ DIRECTFET™ SJ 2.2W (Ta), 42W (Tc) N-Channel - 100V 5.7A (Ta), 25A (Tc) 35 mOhm @ 5.7A, 10V 4.9V @ 50µA 20nC @ 10V 890pF @ 25V 10V ±20V
IRF6645TRPBF
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1,121
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Infineon Technologies MOSFET N-CH 100V 5.7A DIRECTFET HEXFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Surface Mount DirectFET™ Isometric SJ DIRECTFET™ SJ 2.2W (Ta), 42W (Tc) N-Channel - 100V 5.7A (Ta), 25A (Tc) 35 mOhm @ 5.7A, 10V 4.9V @ 50µA 20nC @ 10V 890pF @ 25V 10V ±20V
IRF6655TRPBF
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889
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Infineon Technologies MOSFET N-CH 100V 4.2A DIRECTFET HEXFET® Active Digi-Reel® MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Surface Mount DirectFET™ Isometric SH DIRECTFET™ SH 2.2W (Ta), 42W (Tc) N-Channel - 100V 4.2A (Ta), 19A (Tc) 62 mOhm @ 5A, 10V 4.8V @ 25µA 11.7nC @ 10V 530pF @ 25V 10V ±20V
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1,370
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Infineon Technologies MOSFET N-CH 100V 4.2A DIRECTFET HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Surface Mount DirectFET™ Isometric SH DIRECTFET™ SH 2.2W (Ta), 42W (Tc) N-Channel - 100V 4.2A (Ta), 19A (Tc) 62 mOhm @ 5A, 10V 4.8V @ 25µA 11.7nC @ 10V 530pF @ 25V 10V ±20V
IRF6655TRPBF
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1,787
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Infineon Technologies MOSFET N-CH 100V 4.2A DIRECTFET HEXFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Surface Mount DirectFET™ Isometric SH DIRECTFET™ SH 2.2W (Ta), 42W (Tc) N-Channel - 100V 4.2A (Ta), 19A (Tc) 62 mOhm @ 5A, 10V 4.8V @ 25µA 11.7nC @ 10V 530pF @ 25V 10V ±20V
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3,380
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IXYS MOSFET N-CH 100V 1245A Y3-LI HiPerFET™ Active Tray MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Chassis Mount Y3-Li Y3-Li - N-Channel - 100V 1220A (Tc) 1.35 mOhm @ 932A, 10V 4V @ 64mA 2520nC @ 10V - 10V ±20V
EPC8010
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3,275
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EPC TRANS GAN 100V 2.7A BUMPED DIE eGaN® Active Digi-Reel® GaNFET (Gallium Nitride) -40°C ~ 150°C (TJ) Surface Mount Die Die - N-Channel - 100V 2.7A (Ta) 160 mOhm @ 500mA, 5V 2.5V @ 250µA 0.48nC @ 5V 55pF @ 50V 5V +6V, -4V
EPC8010
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2,186
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EPC TRANS GAN 100V 2.7A BUMPED DIE eGaN® Active Cut Tape (CT) GaNFET (Gallium Nitride) -40°C ~ 150°C (TJ) Surface Mount Die Die - N-Channel - 100V 2.7A (Ta) 160 mOhm @ 500mA, 5V 2.5V @ 250µA 0.48nC @ 5V 55pF @ 50V 5V +6V, -4V