- Packaging :
- Operating Temperature :
- Mounting Type :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
-
- 1 Ohm @ 2.9A, 10V (1)
- 1.05 Ohm @ 2.9A, 10V (4)
- 1.2 Ohm @ 2.6A, 10V (1)
- 1.22 Ohm @ 2.6A, 10V (1)
- 109 mOhm @ 15.4A, 10V (3)
- 110 mOhm @ 13.8A, 10V (2)
- 155 mOhm @ 10A, 10V (4)
- 175 mOhm @ 10A, 10V (2)
- 190 mOhm @ 10A, 10V (3)
- 190 mOhm @ 7.9A, 10V (2)
- 200 mOhm @ 8.7A, 10V (2)
- 230 mOhm @ 7.9A, 10V (1)
- 250 mOhm @ 6.9A, 10V (7)
- 290 mOhm @ 8.5A, 10V (2)
- 300 mOhm @ 6.9A, 10V (7)
- 380 mOhm @ 4.9A, 10V (1)
- 390 mOhm @ 5.5A, 10V (1)
- 430 mOhm @ 4.9A, 10V (1)
- 440 mOhm @ 5.5A, 10V (3)
- 450 mOhm @ 4.9A, 10V (1)
- 450 mOhm @ 5.8A, 10V (2)
- 500 mOhm @ 4.6A, 10V (1)
- 540 mOhm @ 4A, 10V (1)
- 550 mOhm @ 4.8A, 10V (1)
- 560 mOhm @ 4.6A, 10V (3)
- 560 mOhm @ 4A, 10V (3)
- 600 mOhm @ 3.5A, 10V (1)
- 65 mOhm @ 19.4A, 10V (1)
- 650 mOhm @ 3.5A, 10V (1)
- 650 mOhm @ 3.9A, 10V (1)
- 670 mOhm @ 3.9A, 10V (1)
- 74 mOhm @ 19.4A, 10V (1)
- 780 mOhm @ 3.4A, 10V (1)
- 80 mOhm @ 17.5A, 10V (2)
- 800 mOhm @ 3.4A, 10V (3)
- 95 mOhm @ 17.5A, 10V (2)
- 950 mOhm @ 3.3A, 10V (1)
- 99 mOhm @ 15.4A, 10V (1)
- Vgs(th) (Max) @ Id :
-
- 3.5V @ 1.6mA (2)
- 3.5V @ 170µA (2)
- 3.5V @ 180µA (5)
- 3.5V @ 2.1mA (2)
- 3.5V @ 250µA (4)
- 3.5V @ 300µA (2)
- 3.5V @ 350µA (4)
- 3.5V @ 450µA (4)
- 3.5V @ 690µA (7)
- 3.5V @ 900µA (2)
- 3.7V @ 1.9mA (1)
- 3.7V @ 1mA (4)
- 3.7V @ 350µA (1)
- 3.7V @ 500µA (2)
- 3.7V @ 790µA (2)
- 4.5V @ 1.5mA (4)
- 4.5V @ 1.9mA (1)
- 4.5V @ 1mA (5)
- 4.5V @ 2.1mA (2)
- 4.5V @ 350µA (1)
- 4.5V @ 400µA (4)
- 4.5V @ 500µA (1)
- 4.5V @ 690µA (7)
- 4.5V @ 790µA (1)
- 4V @ 280µA (1)
- 4V @ 450µA (1)
- 4V @ 570µA (2)
- 4V @ 850µA (2)
- Gate Charge (Qg) (Max) @ Vgs :
-
- 10.5nC @ 10V (2)
- 100nC @ 10V (2)
- 105nC @ 10V (4)
- 110nC @ 10V (1)
- 115nC @ 10V (2)
- 11nC @ 10V (5)
- 135nC @ 10V (1)
- 13nC @ 10V (1)
- 15nC @ 10V (5)
- 16nC @ 10V (3)
- 19nC @ 10V (1)
- 20nC @ 10V (6)
- 22nC @ 10V (4)
- 23nC @ 10V (2)
- 25nC @ 10V (5)
- 32nC @ 10V (2)
- 35nC @ 10V (7)
- 38nC @ 10V (1)
- 40nC @ 10V (8)
- 43nC @ 10V (1)
- 45nC @ 10V (2)
- 48nC @ 10V (4)
- 55nC @ 10V (5)
- 75nC @ 10V (2)
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
76 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
|
VIEW |
2,319
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 35A TO-247 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-247-3 | TO-247 | 270W (Tc) | N-Channel | - | 650V | 35A (Ta) | 95 mOhm @ 17.5A, 10V | 4.5V @ 2.1mA | 115nC @ 10V | 4100pF @ 300V | 10V | ±30V | |||
|
|
VIEW |
3,188
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 20A TO-247 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-247-3 | TO-247 | 165W (Tc) | N-Channel | - | 600V | 20A (Ta) | 155 mOhm @ 10A, 10V | 3.7V @ 1mA | 48nC @ 10V | 1680pF @ 300V | 10V | ±30V | |||
|
VIEW |
1,583
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 15.8A I2PAK | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 130W (Tc) | N-Channel | - | 600V | 15.8A (Ta) | 190 mOhm @ 7.9A, 10V | 3.7V @ 790µA | 38nC @ 10V | 1350pF @ 300V | 10V | ±30V | |||
|
VIEW |
911
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 15.8A TO-220AB | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 130W (Tc) | N-Channel | - | 600V | 15.8A (Ta) | 230 mOhm @ 7.9A, 10V | 4.5V @ 790µA | 43nC @ 10V | 1350pF @ 300V | 10V | ±30V | |||
|
|
VIEW |
1,796
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 20A TO-220 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 165W (Tc) | N-Channel | - | 600V | 20A (Ta) | 155 mOhm @ 10A, 10V | 3.7V @ 1mA | 48nC @ 10V | 1680pF @ 300V | 10V | ±30V | |||
|
VIEW |
756
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 7A IPAK-3 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-251-3 Stub Leads, IPak | I-PAK | 60W (Tc) | N-Channel | - | 600V | 7A (Ta) | 600 mOhm @ 3.5A, 10V | 3.7V @ 350µA | 15nC @ 10V | 490pF @ 300V | 10V | ±30V | |||
|
VIEW |
808
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 9.7A TO-220 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | - | Through Hole | TO-220-3 Full Pack | TO-220 | 30W (Tc) | N-Channel | - | 600V | 9.7A (Ta) | 380 mOhm @ 4.9A, 10V | 3.7V @ 500µA | 20nC @ 10V | 720pF @ 300V | 10V | ±30V | |||
|
|
VIEW |
2,380
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 15.8A DTMOSIV | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | - | Through Hole | TO-220-3 Full Pack | TO-220 | 40W (Tc) | N-Channel | - | 600V | 15.8A (Ta) | 190 mOhm @ 7.9A, 10V | 3.7V @ 790µA | 40nC @ 10V | 1350pF @ 300V | 10V | ±30V | |||
|
VIEW |
3,267
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 13.7A D2PAK | DTMOSIV | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 130W (Tc) | N-Channel | - | 650V | 13.7A (Ta) | 250 mOhm @ 6.9A, 10V | 3.5V @ 690µA | 35nC @ 10V | 1300pF @ 300V | 10V | ±30V | |||
|
|
VIEW |
1,291
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 13.7A D2PAK | DTMOSIV | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 130W (Tc) | N-Channel | - | 650V | 13.7A (Ta) | 250 mOhm @ 6.9A, 10V | 3.5V @ 690µA | 35nC @ 10V | 1300pF @ 300V | 10V | ±30V | |||
|
|
VIEW |
2,459
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 13.7A D2PAK | DTMOSIV | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 130W (Tc) | N-Channel | - | 650V | 13.7A (Ta) | 250 mOhm @ 6.9A, 10V | 3.5V @ 690µA | 35nC @ 10V | 1300pF @ 300V | 10V | ±30V | |||
|
VIEW |
963
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 39A TO220-3 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 50W (Tc) | N-Channel | - | 600V | 38.8A (Ta) | 65 mOhm @ 19.4A, 10V | 3.7V @ 1.9mA | 110nC @ 10V | 4100pF @ 300V | 10V | ±30V | |||
|
|
VIEW |
800
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 13.7A TO-220 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 130W (Tc) | N-Channel | - | 650V | 13.7A (Ta) | 250 mOhm @ 6.9A, 10V | 3.5V @ 690µA | 35nC @ 10V | 1300pF @ 300V | 10V | ±30V | |||
|
|
VIEW |
1,870
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 11.1A TO-220 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | - | 650V | 11.1A (Ta) | 390 mOhm @ 5.5A, 10V | 3.5V @ 450µA | 25nC @ 10V | 890pF @ 300V | 10V | ±30V | |||
|
VIEW |
807
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 20A I2PAK | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 165W (Tc) | N-Channel | - | 600V | 20A (Ta) | 155 mOhm @ 10A, 10V | 3.7V @ 1mA | 48nC @ 10V | 1680pF @ 300V | 10V | ±30V | |||
|
|
VIEW |
3,753
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 9.7A IPAK | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-251-3 Stub Leads, IPak | I-PAK | 80W (Tc) | N-Channel | - | 600V | 9.7A (Ta) | 430 mOhm @ 4.9A, 10V | 3.7V @ 500µA | 20nC @ 10V | 700pF @ 300V | 10V | ±30V | |||
|
VIEW |
3,899
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 13.7A I2PAK | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 130W (Tc) | N-Channel | - | 650V | 13.7A (Ta) | 300 mOhm @ 6.9A, 10V | 4.5V @ 690µA | 40nC @ 10V | 1300pF @ 300V | 10V | ±30V | |||
|
|
VIEW |
3,205
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 13.7A DPAK | DTMOSIV | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 130W (Tc) | N-Channel | - | 650V | 13.7A (Ta) | 300 mOhm @ 6.9A, 10V | 4.5V @ 690µA | 40nC @ 10V | 1300pF @ 300V | 10V | ±30V | |||
|
|
VIEW |
2,636
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 13.7A DPAK | DTMOSIV | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 130W (Tc) | N-Channel | - | 650V | 13.7A (Ta) | 300 mOhm @ 6.9A, 10V | 4.5V @ 690µA | 40nC @ 10V | 1300pF @ 300V | 10V | ±30V | |||
|
|
VIEW |
1,581
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 13.7A DPAK | DTMOSIV | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 130W (Tc) | N-Channel | - | 650V | 13.7A (Ta) | 300 mOhm @ 6.9A, 10V | 4.5V @ 690µA | 40nC @ 10V | 1300pF @ 300V | 10V | ±30V | |||
|
|
VIEW |
1,748
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 35A TO-220 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 50W (Tc) | N-Channel | - | 650V | 35A (Ta) | 80 mOhm @ 17.5A, 10V | 3.5V @ 2.1mA | 100nC @ 10V | 4100pF @ 300V | 10V | ±30V | |||
|
|
VIEW |
2,870
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 13.7A TO-220 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 40W (Tc) | N-Channel | - | 650V | 13.7A (Ta) | 300 mOhm @ 6.9A, 10V | 4.5V @ 690µA | 40nC @ 10V | 1300pF @ 300V | 10V | ±30V | |||
|
|
VIEW |
2,647
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 9.3A TO-220SIS | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 30W (Tc) | N-Channel | - | 650V | 9.3A (Ta) | 500 mOhm @ 4.6A, 10V | 3.5V @ 350µA | 20nC @ 10V | 700pF @ 300V | 10V | ±30V | |||
|
|
VIEW |
1,939
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 7.8A TO-220SIS | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 30W (Tc) | N-Channel | - | 650V | 7.8A (Ta) | 650 mOhm @ 3.9A, 10V | 3.5V @ 300µA | 16nC @ 10V | 570pF @ 300V | 10V | ±30V | |||
|
|
VIEW |
1,948
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 5.8A TO-220SIS | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 30W (Tc) | N-Channel | - | 650V | 5.8A (Ta) | 1 Ohm @ 2.9A, 10V | 3.5V @ 180µA | 11nC @ 10V | 390pF @ 300V | 10V | ±30V | |||
|
|
VIEW |
3,857
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 6.8A TO-220SIS | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 30W (Tc) | N-Channel | - | 650V | 6.8A (Ta) | 780 mOhm @ 3.4A, 10V | 3.5V @ 250µA | 15nC @ 10V | 490pF @ 300V | 10V | ±30V | |||
|
|
VIEW |
1,139
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 7.8A IPAK | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-251-3 Stub Leads, IPak | I-PAK | 80W (Tc) | N-Channel | - | 650V | 7.8A (Ta) | 670 mOhm @ 3.9A, 10V | 3.5V @ 300µA | 16nC @ 10V | 570pF @ 300V | 10V | ±30V | |||
|
|
VIEW |
2,940
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 5.8A IPAK-OS | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-251-3 Stub Leads, IPak | I-PAK | 60W (Tc) | N-Channel | - | 650V | 5.8A (Ta) | 1.05 Ohm @ 2.9A, 10V | 3.5V @ 180µA | 11nC @ 10V | 390pF @ 300V | 10V | ±30V | |||
|
|
VIEW |
3,332
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 5.2A IPAK | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-251-3 Stub Leads, IPak | I-PAK | 60W (Tc) | N-Channel | - | 650V | 5.2A (Ta) | 1.22 Ohm @ 2.6A, 10V | 3.5V @ 170µA | 10.5nC @ 10V | 380pF @ 300V | 10V | ±30V | |||
|
VIEW |
2,740
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 5.8A DPAK | DTMOSIV | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 60W (Tc) | N-Channel | - | 650V | 5.8A (Ta) | 1.05 Ohm @ 2.9A, 10V | 3.5V @ 180µA | 11nC @ 10V | 390pF @ 300V | 10V | ±30V | |||
