- Part Status :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Vgs (Max) :
- Applied Filters :
8 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GLOBAL STOCKS | ||||||||||||||||||||||||||
VIEW |
2,748
In-stock
|
Microsemi Corporation | POWER MOSFET - SIC | - | Obsolete | Bulk | SiCFET (Silicon Carbide) | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | SOT-227 | 273W (Tc) | N-Channel | - | 1200V | 51A (Tc) | 55 mOhm @ 40A, 20V | 2.5V @ 1mA | 235nC @ 20V | - | 20V | +25V, -10V | ||||
VIEW |
2,737
In-stock
|
Microsemi Corporation | POWER MOSFET - SIC | - | Obsolete | Bulk | SiCFET (Silicon Carbide) | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | SOT-227 | 165W (Tc) | N-Channel | - | 700V | 49A (Tc) | 70 mOhm @ 32.5A, 20V | 2.5V @ 1mA | 125nC @ 20V | - | 20V | +25V, -10V | ||||
VIEW |
3,730
In-stock
|
Vishay Semiconductor Diodes Division | MOSFET N-CH 200V 220A SOT-227 | - | Active | Bulk | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | SOT-227 | 789W (Tc) | N-Channel | - | 200V | 220A (Tc) | 7 mOhm @ 150A, 10V | 5.1V @ 500µA | 350nC @ 10V | 21000pF @ 50V | 10V | ±30V | ||||
VIEW |
3,624
In-stock
|
Vishay Semiconductor Diodes Division | MOSFET N-CH 200V 108A | - | Active | Bulk | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | SOT-227 | 405W (Tc) | N-Channel | - | 200V | 108A (Tc) | 14 mOhm @ 80A, 10V | 5.5V @ 250µA | 161nC @ 10V | 10720pF @ 50V | 10V | ±30V | ||||
VIEW |
1,742
In-stock
|
GeneSiC Semiconductor | TRANS SJT 1700V 160A SOT227 | - | Not For New Designs | Tube | SiC (Silicon Carbide Junction Transistor) | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | SOT-227 | 535W (Tc) | - | - | 1700V | 160A (Tc) | 10 mOhm @ 100A | - | - | 14400pF @ 800V | - | - | ||||
VIEW |
3,366
In-stock
|
Microsemi Corporation | MOSFET N-CH 1200V 32A SOT227 | - | Obsolete | Bulk | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | SOT-227 | 165W (Tc) | N-Channel | - | 1200V | 32A (Tc) | 100 mOhm @ 20A, 20V | 3V @ 1mA (Typ) | 130nC @ 20V | 2560pF @ 1000V | 20V | +25V, -10V | ||||
VIEW |
3,376
In-stock
|
GeneSiC Semiconductor | TRANS SJT 1200V 160A SOT227 | - | Active | Tube | SiC (Silicon Carbide Junction Transistor) | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | SOT-227 | 535W (Tc) | - | - | 1200V | 160A (Tc) | 10 mOhm @ 100A | - | - | 14400pF @ 800V | - | - | ||||
VIEW |
2,521
In-stock
|
Vishay Semiconductor Diodes Division | POWER MODULE 100V 435A SOT-227 | TrenchFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | SOT-227 | 652W (Tc) | N-Channel | - | 100V | 435A (Tc) | 2.15 mOhm @ 200A, 10V | 3.8V @ 750µA | 375nC @ 10V | 17300pF @ 25V | 10V | ±20V |