Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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VS-FC220SA20
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3,730
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Vishay Semiconductor Diodes Division MOSFET N-CH 200V 220A SOT-227 - Active Bulk MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Chassis Mount SOT-227-4, miniBLOC SOT-227 789W (Tc) N-Channel - 200V 220A (Tc) 7 mOhm @ 150A, 10V 5.1V @ 500µA 350nC @ 10V 21000pF @ 50V 10V ±30V
VS-FC80NA20
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3,624
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Vishay Semiconductor Diodes Division MOSFET N-CH 200V 108A - Active Bulk MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Chassis Mount SOT-227-4, miniBLOC SOT-227 405W (Tc) N-Channel - 200V 108A (Tc) 14 mOhm @ 80A, 10V 5.5V @ 250µA 161nC @ 10V 10720pF @ 50V 10V ±30V
GA100JT12-227
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3,376
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GeneSiC Semiconductor TRANS SJT 1200V 160A SOT227 - Active Tube SiC (Silicon Carbide Junction Transistor) -55°C ~ 175°C (TJ) Chassis Mount SOT-227-4, miniBLOC SOT-227 535W (Tc) - - 1200V 160A (Tc) 10 mOhm @ 100A - - 14400pF @ 800V - -
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2,521
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Vishay Semiconductor Diodes Division POWER MODULE 100V 435A SOT-227 TrenchFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Chassis Mount SOT-227-4, miniBLOC SOT-227 652W (Tc) N-Channel - 100V 435A (Tc) 2.15 mOhm @ 200A, 10V 3.8V @ 750µA 375nC @ 10V 17300pF @ 25V 10V ±20V