Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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TK31N60W,S1VF
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RFQ
1,355
In-stock
Toshiba Semiconductor and Storage MOSFET N CH 600V 30.8A TO247 DTMOSIV Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-247-3 TO-247 230W (Tc) N-Channel Super Junction 600V 30.8A (Ta) 88 mOhm @ 15.4A, 10V 3.7V @ 1.5mA 86nC @ 10V 3000pF @ 300V 10V ±30V
TK16N60W,S1VF
RFQ
VIEW
RFQ
2,287
In-stock
Toshiba Semiconductor and Storage MOSFET N CH 600V 15.8A TO247 DTMOSIV Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-247-3 TO-247 130W (Tc) N-Channel Super Junction 600V 15.8A (Ta) 190 mOhm @ 7.9A, 10V 3.7V @ 790µA 38nC @ 10V 1350pF @ 300V 10V ±30V
TK62N60W,S1VF
RFQ
VIEW
RFQ
1,714
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 600V 61.8A TO-247 DTMOSIV Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-247-3 TO-247 400W (Tc) N-Channel Super Junction 600V 61.8A (Ta) 40 mOhm @ 30.9A, 10V 3.7V @ 3.1mA 180nC @ 10V 6500pF @ 300V 10V ±30V
TK39N60W,S1VF
RFQ
VIEW
RFQ
2,488
In-stock
Toshiba Semiconductor and Storage MOSFET N CH 600V 38.8A TO247 DTMOSIV Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-247-3 TO-247 270W (Tc) N-Channel Super Junction 600V 38.8A (Ta) 65 mOhm @ 19.4A, 10V 3.7V @ 1.9mA 110nC @ 10V 4100pF @ 300V 10V ±30V