Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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NTLUS3A39PZCTBG
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ON Semiconductor MOSFET P-CH 20V 5.2A UDFN6 µCool™ Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-PowerUFDFN 6-UDFN (1.6x1.6) 600mW (Ta) P-Channel - 20V 3.4A (Ta) 39 mOhm @ 4A, 4.5V 1V @ 250µA 10.4nC @ 4.5V 920pF @ 15V 1.5V, 4.5V ±8V
NTLUS3A39PZCTAG
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2,380
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ON Semiconductor MOSFET P-CH 20V 5.2A UDFN6 µCool™ Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-PowerUFDFN 6-UDFN (1.6x1.6) 600mW (Ta) P-Channel - 20V 3.4A (Ta) 39 mOhm @ 4A, 4.5V 1V @ 250µA 10.4nC @ 4.5V 920pF @ 15V 1.5V, 4.5V ±8V
NTLUS3A39PZTBG
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1,392
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ON Semiconductor MOSFET P-CH 20V 3.4A 6UDFN µCool™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-PowerUFDFN 6-UDFN (1.6x1.6) 600mW (Ta) P-Channel - 20V 3.4A (Ta) 39 mOhm @ 4A, 4.5V 1V @ 250µA 10.4nC @ 4.5V 920pF @ 15V 1.5V, 4.5V ±8V
NTLUS3A39PZTAG
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1,512
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ON Semiconductor MOSFET P-CH 20V 5.2A 6UDFN µCool™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-PowerUFDFN 6-UDFN (1.6x1.6) 600mW (Ta) P-Channel - 20V 3.4A (Ta) 39 mOhm @ 4A, 4.5V 1V @ 250µA 10.4nC @ 4.5V 920pF @ 15V 1.5V, 4.5V ±8V
SSM6J215FE(TE85L,F
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1,616
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Toshiba Semiconductor and Storage MOSFET P CH 20V 3.4A ES6 U-MOSVI Active Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SOT-563, SOT-666 ES6 500mW (Ta) P-Channel - 20V 3.4A (Ta) 59 mOhm @ 3A, 4.5V 1V @ 1mA 10.4nC @ 4.5V 630pF @ 10V 1.5V, 4.5V ±8V
SSM6J215FE(TE85L,F
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3,305
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Toshiba Semiconductor and Storage MOSFET P CH 20V 3.4A ES6 U-MOSVI Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SOT-563, SOT-666 ES6 500mW (Ta) P-Channel - 20V 3.4A (Ta) 59 mOhm @ 3A, 4.5V 1V @ 1mA 10.4nC @ 4.5V 630pF @ 10V 1.5V, 4.5V ±8V
SSM6J215FE(TE85L,F
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1,287
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Toshiba Semiconductor and Storage MOSFET P CH 20V 3.4A ES6 U-MOSVI Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SOT-563, SOT-666 ES6 500mW (Ta) P-Channel - 20V 3.4A (Ta) 59 mOhm @ 3A, 4.5V 1V @ 1mA 10.4nC @ 4.5V 630pF @ 10V 1.5V, 4.5V ±8V
SSM3J331R,LF
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1,974
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Toshiba Semiconductor and Storage MOSFET P CH 20V 4A SOT-23F U-MOSVI Active Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SOT-23-3 Flat Leads SOT-23F 1W (Ta) P-Channel - 20V 4A (Ta) 55 mOhm @ 3A, 4.5V 1V @ 1mA 10.4nC @ 4.5V 630pF @ 10V 1.5V, 4.5V ±8V
SSM3J331R,LF
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3,375
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Toshiba Semiconductor and Storage MOSFET P CH 20V 4A SOT-23F U-MOSVI Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SOT-23-3 Flat Leads SOT-23F 1W (Ta) P-Channel - 20V 4A (Ta) 55 mOhm @ 3A, 4.5V 1V @ 1mA 10.4nC @ 4.5V 630pF @ 10V 1.5V, 4.5V ±8V
SSM3J331R,LF
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3,662
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Toshiba Semiconductor and Storage MOSFET P CH 20V 4A SOT-23F U-MOSVI Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SOT-23-3 Flat Leads SOT-23F 1W (Ta) P-Channel - 20V 4A (Ta) 55 mOhm @ 3A, 4.5V 1V @ 1mA 10.4nC @ 4.5V 630pF @ 10V 1.5V, 4.5V ±8V