Operating Temperature :
Supplier Device Package :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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Toshiba Semiconductor and Storage MOSFET P-CH 60V 400MA S-MINI U-MOSVI Active Digi-Reel® MOSFET (Metal Oxide) 150°C Surface Mount TO-236-3, SC-59, SOT-23-3 S-Mini 1.2W (Ta) P-Channel 60V 400mA (Ta) 1.9 Ohm @ 100mA, 4.5V 2V @ 1mA 3nC @ 10V 82pF @ 10V 4V, 10V +20V, -16V
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Nexperia USA Inc. MOSFET P-CH 60V 300MA SOT-23 - Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 TO-236AB (SOT23) 417mW (Ta) P-Channel 60V 300mA (Ta) 2.5 Ohm @ 160mA, 10V 1V @ 1mA (Min) 3nC @ 10V 70pF @ 48V 4.5V, 10V ±20V