Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Vgs (Max) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
SI2333DS-T1-GE3
RFQ
VIEW
RFQ
1,410
In-stock
Vishay Siliconix MOSFET P-CH 12V 4.1A SOT23-3 TrenchFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23-3 (TO-236) 750mW (Ta) P-Channel 12V 4.1A (Ta) 32 mOhm @ 5.3A, 4.5V 1V @ 250µA 18nC @ 4.5V 1100pF @ 6V 1.8V, 4.5V ±8V
SI2305-TP
RFQ
VIEW
RFQ
1,970
In-stock
Micro Commercial Co P-CHANNEL MOSFET, SOT-23 PACKAGE - Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23 350mW (Ta) P-Channel 8V 4.1A (Ta) 90 mOhm @ 2A, 1.8V 900mV @ 250µA 15nC @ 4.5V - 4.5V ±8V
SI2333DS-T1-E3
RFQ
VIEW
RFQ
3,487
In-stock
Vishay Siliconix MOSFET P-CH 12V 4.1A SOT23-3 TrenchFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23-3 (TO-236) 750mW (Ta) P-Channel 12V 4.1A (Ta) 32 mOhm @ 5.3A, 4.5V 1V @ 250µA 18nC @ 4.5V 1100pF @ 6V 1.8V, 4.5V ±8V
SI3407-TP
RFQ
VIEW
RFQ
2,324
In-stock
Micro Commercial Co P-CHANNEL MOSFET, SOT-23 PACKAGE - Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23 350mW (Ta) P-Channel 30V 4.1A (Ta) 87 mOhm @ 2.9A, 4.5V 3V @ 250µA - 700pF @ 15V 10V ±20V