- Technology :
- Operating Temperature :
- Mounting Type :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
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18 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
1,661
In-stock
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Renesas Electronics America | MOSFET N-CH 1500V 2A TO-3P | - | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-3PFM, SC-93-3 | TO-3PFM | 50W (Tc) | N-Channel | - | 1500V | 2A (Ta) | 12 Ohm @ 1A, 15V | - | - | 984.7pF @ 30V | 15V | ±20V | |||
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VIEW |
3,363
In-stock
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Microsemi Corporation | MOSFET N-CH 500V 58A T-MAX | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 Variant | T-MAX™ [B2] | 730W (Tc) | N-Channel | - | 500V | 58A (Tc) | 90 mOhm @ 29A, 12V | 4V @ 2.5mA | - | 9000pF @ 25V | 15V | ±30V | |||
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VIEW |
1,526
In-stock
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Renesas Electronics America | MOSFET N-CH 1500V 2.5A TO-3P | - | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P | 100W (Tc) | N-Channel | - | 1500V | 2.5A (Ta) | 12 Ohm @ 2A, 15V | - | - | 990pF @ 10V | 15V | ±20V | |||
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VIEW |
2,845
In-stock
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Cree/Wolfspeed | MOSFET N-CH 900V 36A TO247-3 | C3M™ | Active | Tube | SiCFET (Silicon Carbide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 125W (Tc) | N-Channel | - | 900V | 36A (Tc) | 78 mOhm @ 20A, 15V | 2.1V @ 5mA | 30.4nC @ 15V | 660pF @ 600V | 15V | +18V, -8V | |||
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VIEW |
3,456
In-stock
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Cree/Wolfspeed | MOSFET N-CH 900V 11A | C3M™ | Active | Tube | SiCFET (Silicon Carbide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | D2PAK-7 | 50W (Tc) | N-Channel | - | 900V | 11A (Tc) | 360 mOhm @ 7.5A, 15V | 3.5V @ 1.2mA | 9.5nC @ 15V | 150pF @ 600V | 15V | +18V, -8V | |||
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VIEW |
2,586
In-stock
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Cree/Wolfspeed | MOSFET N-CH 1200V 30.8A TO247-4 | C3M™ | Active | Tube | SiCFET (Silicon Carbide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-4 | TO-247-4L | 119W (Tc) | N-Channel | - | 1200V | 30.8A (Tc) | 90 mOhm @ 20A, 15V | 4V @ 5mA | 51nC @ 15V | 1350pF @ 1000V | 15V | +19V, -8V | |||
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VIEW |
1,846
In-stock
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IXYS-RF | 2A 1000V MOSFET IN SMPD PACKAGE | SMPD | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 16-BESOP (0.790", 20.11mm Width), 15 Leads, Exposed Pad | 16-SMPD | 940W | N-Channel | - | 1000V | 12A (Tc) | 1.05 Ohm @ 6A, 15V | 5.5V @ 250µA | 77nC @ 10V | 2875pF @ 800V | 15V | ±20V | |||
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VIEW |
1,699
In-stock
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Renesas Electronics America | MOSFET N-CH 1500V 4A TO-3P | - | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P | 125W (Tc) | N-Channel | - | 1500V | 4A (Ta) | 7 Ohm @ 2A, 15V | - | - | 1700pF @ 10V | 15V | ±20V | |||
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VIEW |
2,199
In-stock
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Microsemi Corporation | MOSFET N-CH 500V 58A TO-264 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | TO-264 [L] | 730W (Tc) | N-Channel | - | 500V | 58A (Tc) | 90 mOhm @ 29A, 12V | 4V @ 2.5mA | - | 9000pF @ 25V | 15V | ±30V | |||
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VIEW |
1,656
In-stock
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Microsemi Corporation | MOSFET N-CH 500V 52A SOT-227 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | ISOTOP® | 568W (Tc) | N-Channel | - | 500V | 52A (Tc) | 90 mOhm @ 26A, 12V | 4V @ 2.5mA | - | 9000pF @ 25V | 15V | ±30V | |||
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VIEW |
1,903
In-stock
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Cree/Wolfspeed | MOSFET N-CH 1000V 22A TO247-4L | C3M™ | Active | Tube | SiCFET (Silicon Carbide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-4 | TO-247-4L | 83W (Tc) | N-Channel | - | 1000V | 22A (Tc) | 155 mOhm @ 15A, 15V | 3.5V @ 3mA | 21.5nC @ 15V | 350pF @ 600V | 15V | ±15V | |||
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VIEW |
927
In-stock
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Cree/Wolfspeed | MOSFET N-CH 1000V 22A D2PAK-7 | C3M™ | Active | Tube | SiCFET (Silicon Carbide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | D2PAK-7 | 83W (Tc) | N-Channel | - | 1000V | 22A (Tc) | 155 mOhm @ 15A, 15V | 3.5V @ 3mA | 21.5nC @ 15V | 350pF @ 600V | 15V | +15V, -4V | |||
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VIEW |
1,119
In-stock
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Cree/Wolfspeed | MOSFET N-CH 1000V 35A D2PAK-7 | C3M™ | Active | Tube | SiCFET (Silicon Carbide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | D2PAK-7 | 113.5W (Tc) | N-Channel | - | 1000V | 35A (Tc) | 78 mOhm @ 20A, 15V | 3.5V @ 5mA | 35nC @ 15V | 660pF @ 600V | 15V | +15V, -4V | |||
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VIEW |
2,578
In-stock
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Cree/Wolfspeed | 1000V, 65 MOHM, G3 SIC MOSFET | C3M™ | Active | Tube | SiCFET (Silicon Carbide) | -55°C ~ 150°C (TJ) | - | TO-247-4 | TO-247-4L | 113.5W (Tc) | N-Channel | - | 1000V | 35A (Tc) | 78 mOhm @ 20A, 15V | 3.5V @ 5mA | 35nC @ 15V | 660pF @ 600V | 15V | +19V, -8V | |||
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VIEW |
3,614
In-stock
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Cree/Wolfspeed | MOSFET N-CH 900V 35A D2PAK-7 | C3M™ | Active | Tube | SiCFET (Silicon Carbide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | D2PAK-7 | 113W (Tc) | N-Channel | - | 900V | 35A (Tc) | 78 mOhm @ 20A, 15V | 2.1V @ 5mA | 30nC @ 15V | 660pF @ 600V | 15V | +19V, -8V | |||
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VIEW |
2,716
In-stock
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Cree/Wolfspeed | MOSFET N-CH 900V 22A | C3M™ | Active | Tube | SiCFET (Silicon Carbide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | D2PAK-7 | 83W (Tc) | N-Channel | - | 900V | 22A (Tc) | 155 mOhm @ 15A, 15V | 3.5V @ 3mA | 17.3nC @ 15V | 350pF @ 600V | 15V | +18V, -8V | |||
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VIEW |
2,601
In-stock
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Cree/Wolfspeed | 900V, 120 MOHM, G3 SIC MOSFET | C3M™ | Active | Tube | SiCFET (Silicon Carbide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 97W (Tc) | N-Channel | - | 900V | 23A (Tc) | 155 mOhm @ 15A, 15V | 3.5V @ 3mA | 17.3nC @ 15V | 350pF @ 600V | 15V | +18V, -8V | |||
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VIEW |
2,189
In-stock
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Cree/Wolfspeed | MOSFET N-CH 900V 11.5A | C3M™ | Active | Tube | SiCFET (Silicon Carbide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 54W (Tc) | N-Channel | - | 900V | 11.5A (Tc) | 360 mOhm @ 7.5A, 15V | 3.5V @ 1.2mA | 9.5nC @ 15V | 150pF @ 600V | 15V | +18V, -8V | |||
