- Technology :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
-
- 1.5 Ohm @ 1.1A, 18V (1)
- 104 mOhm @ 10A, 18V (2)
- 117 mOhm @ 10A, 18V (2)
- 156 mOhm @ 10A, 18V (1)
- 156 mOhm @ 6.7A, 18V (1)
- 208 mOhm @ 5A, 18V (1)
- 208 mOhm @ 7A, 18V (1)
- 28.6 mOhm @ 36A, 18V (1)
- 364 mOhm @ 4A, 18V (1)
- 39 mOhm @ 27A, 18V (2)
- 52 mOhm @ 20A, 18V (1)
- 585 mOhm @ 3A, 18V (1)
- 78 mOhm @ 13A, 18V (1)
- Input Capacitance (Ciss) (Max) @ Vds :
- Vgs (Max) :
- Applied Filters :
16 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | |||||||||||||||||||||||||
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VIEW |
1,152
In-stock
|
Rohm Semiconductor | MOSFET NCH 1.2KV 72A TO247N | - | Active | Tube | SiCFET (Silicon Carbide) | 175°C (TJ) | Through Hole | TO-247-3 | TO-247N | 339W (Tc) | N-Channel | 1200V | 72A (Tc) | 39 mOhm @ 27A, 18V | 5.6V @ 13.3mA | 131nC @ 18V | 2222pF @ 800V | 18V | +22V, -4V | |||
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|
VIEW |
1,738
In-stock
|
Rohm Semiconductor | MOSFET NCH 650V 93A TO247N | - | Active | Tube | SiCFET (Silicon Carbide) | 175°C (TJ) | Through Hole | TO-247-3 | TO-247N | 339W (Tc) | N-Channel | 650V | 93A (Tc) | 28.6 mOhm @ 36A, 18V | 5.6V @ 18.2mA | 133nC @ 18V | 2208pF @ 500V | 18V | +22V, -4V | |||
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|
VIEW |
2,630
In-stock
|
Rohm Semiconductor | MOSFET N-CH 1200V 40A TO-247 | - | Active | Tube | SiCFET (Silicon Carbide) | 175°C (TJ) | Through Hole | TO-247-3 | TO-247 | 262W (Tc) | N-Channel | 1200V | 40A (Tc) | 117 mOhm @ 10A, 18V | 4V @ 4.4mA | 106nC @ 18V | 2080pF @ 800V | 18V | +22V, -6V | |||
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|
VIEW |
2,729
In-stock
|
Rohm Semiconductor | MOSFET NCH 1.2KV 55A TO247N | - | Active | Tube | SiCFET (Silicon Carbide) | 175°C (TJ) | Through Hole | TO-247-3 | TO-247N | 262W (Tc) | N-Channel | 1200V | 55A (Tc) | 52 mOhm @ 20A, 18V | 5.6V @ 10mA | 107nC @ 18V | 1337pF @ 800V | 18V | +22V, -4V | |||
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|
VIEW |
3,384
In-stock
|
Rohm Semiconductor | MOSFET NCH 650V 70A TO247N | - | Active | Tube | SiCFET (Silicon Carbide) | 175°C (TJ) | Through Hole | TO-247-3 | TO-247N | 262W (Tc) | N-Channel | 650V | 70A (Tc) | 39 mOhm @ 27A, 18V | 5.6V @ 13.3mA | 104nC @ 18V | 1526pF @ 500V | 18V | +22V, -4V | |||
|
VIEW |
1,274
In-stock
|
Rohm Semiconductor | MOSFET N-CH 650V 29A TO-220AB | - | Active | Tube | SiCFET (Silicon Carbide) | 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 165W (Tc) | N-Channel | 650V | 29A (Tc) | 156 mOhm @ 10A, 18V | 4V @ 3.3mA | 61nC @ 18V | 1200pF @ 500V | 18V | +22V, -6V | |||
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|
VIEW |
2,045
In-stock
|
Rohm Semiconductor | MOSFET N-CH 1200V 14A TO-247 | - | Active | Tube | SiCFET (Silicon Carbide) | 175°C (TJ) | Through Hole | TO-247-3 | TO-247 | 108W (Tc) | N-Channel | 1200V | 14A (Tc) | 364 mOhm @ 4A, 18V | 4V @ 1.4mA | 36nC @ 18V | 667pF @ 800V | 18V | +22V, -6V | |||
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|
VIEW |
2,545
In-stock
|
Rohm Semiconductor | MOSFET NCH 1.2KV 31A TO247N | - | Active | Tube | SiCFET (Silicon Carbide) | 175°C (TJ) | Through Hole | TO-247-3 | TO-247N | 165W (Tc) | N-Channel | 1200V | 31A (Tc) | 104 mOhm @ 10A, 18V | 5.6V @ 5mA | 60nC @ 18V | 785pF @ 800V | 18V | +22V, -4V | |||
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|
VIEW |
944
In-stock
|
Rohm Semiconductor | MOSFET NCH 650V 39A TO247N | - | Active | Tube | SiCFET (Silicon Carbide) | 175°C (TJ) | Through Hole | TO-247-3 | TO-247N | 165W (Tc) | N-Channel | 650V | 39A (Tc) | 78 mOhm @ 13A, 18V | 5.6V @ 6.67mA | 58nC @ 18V | 852pF @ 500V | 18V | +22V, -4V | |||
|
VIEW |
2,000
In-stock
|
Rohm Semiconductor | MOSFET N-CH 1700V 3.7A | - | Active | Tube | SiCFET (Silicon Carbide) | 175°C (TJ) | Through Hole | TO-3PFM, SC-93-3 | TO-3PFM | 35W (Tc) | N-Channel | 1700V | 3.7A (Tc) | 1.5 Ohm @ 1.1A, 18V | 4V @ 900µA | 14nC @ 18V | 184pF @ 800V | 18V | +22V, -6V | |||
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|
VIEW |
1,359
In-stock
|
Rohm Semiconductor | MOSFET NCH 1.2KV 17A TO247N | - | Active | Tube | SiCFET (Silicon Carbide) | 175°C (TJ) | Through Hole | TO-247-3 | TO-247N | 103W (Tc) | N-Channel | 1200V | 17A (Tc) | 208 mOhm @ 5A, 18V | 5.6V @ 2.5mA | 42nC @ 18V | 398pF @ 800V | 18V | +22V, -4V | |||
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|
VIEW |
2,963
In-stock
|
Rohm Semiconductor | MOSFET NCH 650V 21A TO247N | - | Active | Tube | SiCFET (Silicon Carbide) | 175°C (TJ) | Through Hole | TO-247-3 | TO-247N | 103W (Tc) | N-Channel | 650V | 21A (Tc) | 156 mOhm @ 6.7A, 18V | 5.6V @ 3.33mA | 38nC @ 18V | 460pF @ 500V | 18V | +22V, -4V | |||
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|
VIEW |
3,051
In-stock
|
Rohm Semiconductor | MOSFET N-CH 650V 30A TO247 | - | Active | Tube | MOSFET (Metal Oxide) | 175°C (TJ) | Through Hole | TO-247-3 | TO-247N | 134W (Tc) | N-Channel | 650V | 30A (Tc) | 104 mOhm @ 10A, 18V | 5.6V @ 5mA | 48nC @ 18V | 571pF @ 500V | 18V | +22V, -4V | |||
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|
VIEW |
690
In-stock
|
Rohm Semiconductor | MOSFET N-CH 1200V 40A TO-247 | - | Active | Tube | SiCFET (Silicon Carbide) | 175°C (TJ) | Through Hole | TO-247-3 | TO-247 | 262W (Tc) | N-Channel | 1200V | 40A (Tc) | 117 mOhm @ 10A, 18V | 4V @ 4.4mA | 106nC @ 18V | 1850pF @ 800V | 18V | +22V, -6V | |||
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|
VIEW |
1,872
In-stock
|
Rohm Semiconductor | MOSFET N-CH 1200V 22A TO-247 | - | Active | Tube | SiCFET (Silicon Carbide) | 175°C (TJ) | Through Hole | TO-247-3 | TO-247 | 165W (Tc) | N-Channel | 1200V | 22A (Tc) | 208 mOhm @ 7A, 18V | 4V @ 2.5mA | 62nC @ 18V | 1200pF @ 800V | 18V | +22V, -6V | |||
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|
VIEW |
1,775
In-stock
|
Rohm Semiconductor | MOSFET N-CH 1200V 10A TO-247 | - | Active | Tube | SiCFET (Silicon Carbide) | 175°C (TJ) | Through Hole | TO-247-3 | TO-247 | 85W (Tc) | N-Channel | 1200V | 10A (Tc) | 585 mOhm @ 3A, 18V | 4V @ 900µA | 27nC @ 18V | 463pF @ 800V | 18V | +22V, -6V | |||
