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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	IPI024N06N3GHKSA1	RFQ VIEW	PDF RFQ	1,751 In-stock	Infineon Technologies	MOSFET N-CH 60V 120A TO262-3		OptiMOS™	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-262-3 Long Leads, I²Pak, TO-262AA	PG-TO262-3	250W (Tc)	N-Channel	-	60V	120A (Tc)	2.4 mOhm @ 100A, 10V	4V @ 196µA	275nC @ 10V	23000pF @ 30V	10V	±20V
	IPP024N06N3GHKSA1	RFQ VIEW	PDF RFQ	3,847 In-stock	Infineon Technologies	MOSFET N-CH 60V 120A TO220-3		OptiMOS™	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	PG-TO-220-3	250W (Tc)	N-Channel	-	60V	120A (Tc)	2.4 mOhm @ 100A, 10V	4V @ 196µA	275nC @ 10V	23000pF @ 30V	10V	±20V
	IPP024N06N3GXKSA1	RFQ VIEW	PDF RFQ	801 In-stock	Infineon Technologies	MOSFET N-CH 60V 120A TO220-3		OptiMOS™	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	PG-TO-220-3	250W (Tc)	N-Channel	-	60V	120A (Tc)	2.4 mOhm @ 100A, 10V	4V @ 196µA	275nC @ 10V	23000pF @ 30V	10V	±20V
	IPI024N06N3GXKSA1	RFQ VIEW	PDF RFQ	3,441 In-stock	Infineon Technologies	MOSFET N-CH 60V 120A		OptiMOS™	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Surface Mount	TO-262-3 Long Leads, I²Pak, TO-262AA	PG-TO262-3	250W (Tc)	N-Channel	-	60V	120A (Tc)	2.4 mOhm @ 100A, 10V	4V @ 196µA	275nC @ 10V	23000pF @ 30V	10V	±20V

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