Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
TK20A25D,S5Q(M
RFQ
VIEW
RFQ
2,724
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 250V 20A TO-220SIS π-MOSVII Obsolete Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 45W (Tc) N-Channel 250V 20A (Ta) 100 mOhm @ 10A, 10V 3.5V @ 1mA 55nC @ 10V 2550pF @ 100V 10V ±20V
SIHG32N50D-E3
RFQ
VIEW
RFQ
2,114
In-stock
Vishay Siliconix MOSFET N-CH 500V 30A TO-247AC - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247AC 390W (Tc) N-Channel 500V 30A (Tc) 150 mOhm @ 16A, 10V 5V @ 250µA 96nC @ 10V 2550pF @ 100V 10V ±30V
SIHG32N50D-GE3
RFQ
VIEW
RFQ
1,539
In-stock
Vishay Siliconix MOSFET N-CH 500V 30A TO-247AC - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247AC 390W (Tc) N-Channel 500V 30A (Tc) 150 mOhm @ 16A, 10V 5V @ 250µA 96nC @ 10V 2550pF @ 100V 10V ±30V