Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IPUH6N03LB G
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Infineon Technologies MOSFET N-CH 30V 50A IPAK OptiMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA PG-TO251-3 83W (Tc) N-Channel - 30V 50A (Tc) 6.3 mOhm @ 50A, 10V 2V @ 40µA 22nC @ 5V 2800pF @ 15V 4.5V, 10V ±20V
IPU06N03LB G
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3,031
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Infineon Technologies MOSFET N-CH 30V 50A IPAK OptiMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA PG-TO251-3 94W (Tc) N-Channel - 30V 50A (Tc) 6.3 mOhm @ 50A, 10V 2V @ 40µA 22nC @ 5V 2800pF @ 15V 4.5V, 10V ±20V
IPSH6N03LB G
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1,475
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Infineon Technologies MOSFET N-CH 30V 50A IPAK OptiMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-251-3 Stub Leads, IPak PG-TO251-3 83W (Tc) N-Channel - 30V 50A (Tc) 6.3 mOhm @ 50A, 10V 2V @ 40µA 22nC @ 5V 2800pF @ 15V 4.5V, 10V ±20V