Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IPA65R1K5CEXKSA1
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Infineon Technologies MOSFET N-CH 650V TO220-3 CoolMOS™ Active Tube MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack PG-TO220 Full Pack 30W (Tc) N-Channel Super Junction 650V 5.2A (Tc) 1.5 Ohm @ 1A, 10V 3.5V @ 130µA 10.5nC @ 10V 225pF @ 100V 10V ±20V
IPS65R1K5CEAKMA1
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903
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Infineon Technologies MOSFET N-CH 650V TO-251-3 CoolMOS™ CE Last Time Buy Tube MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Through Hole TO-251-3 Stub Leads, IPak TO-251 28W (Tc) N-Channel - 650V 3.1A (Tc) 1.5 Ohm @ 1A, 10V 3.5V @ 100µA 10.5nC @ 10V 225pF @ 100V 10V ±20V
IPSA70R1K4CEAKMA1
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2,357
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Infineon Technologies MOSFET N-CH 700V 5.4A IPAK - Active Tube MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Through Hole TO-251-3 Stub Leads, IPak IPAK (TO-251) 53W (Tc) N-Channel - 700V 5.4A (Tc) 1.4 Ohm @ 1A, 10V 3.5V @ 100µA 10.5nC @ 10V 225pF @ 100V 10V ±20V
IPS70R1K4CEAKMA1
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3,367
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Infineon Technologies MOSFET NCH 700V 5.4A TO251 CoolMOS™ Active Tube MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Surface Mount TO-251-3 Stub Leads, IPak PG-TO251 53W (Tc) N-Channel Super Junction 700V 5.4A (Tc) 1.4 Ohm @ 1A, 10V 3.5V @ 100µA 10.5nC @ 10V 225pF @ 100V 10V ±20V
IPS65R1K4C6AKMA1
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1,028
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Infineon Technologies MOSFET N-CH 650V 3.2A TO-251 CoolMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Stub Leads, IPak PG-TO251-3 28W (Tc) N-Channel - 650V 3.2A (Tc) 1.4 Ohm @ 1A, 10V 3.5V @ 100µA 10.5nC @ 10V 225pF @ 100V 10V ±20V