Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRF3305
RFQ
VIEW
RFQ
2,875
In-stock
Infineon Technologies MOSFET N-CH 55V 75A TO-220AB HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 330W (Tc) N-Channel - 55V 75A (Tc) 8 mOhm @ 75A, 10V 4V @ 250µA 150nC @ 10V 3650pF @ 25V 10V ±20V
AUIRF3305
RFQ
VIEW
RFQ
3,533
In-stock
Infineon Technologies MOSFET N-CH 55V 140A TO220AB HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220 330W (Tc) N-Channel - 55V 140A (Tc) 8 mOhm @ 75A, 10V 4V @ 250µA 150nC @ 10V 3650pF @ 25V 10V ±20V
IXTT2N170D2
RFQ
VIEW
RFQ
3,980
In-stock
IXYS MOSFET N-CH 1700V 2A TO-268 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-268 568W (Tc) N-Channel Depletion Mode 1700V 2A (Tj) 6.5 Ohm @ 1A, 0V - 110nC @ 5V 3650pF @ 25V - ±20V
IRF3305PBF
RFQ
VIEW
RFQ
1,986
In-stock
Infineon Technologies MOSFET N-CH 55V 75A TO-220AB HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 330W (Tc) N-Channel - 55V 75A (Tc) 8 mOhm @ 75A, 10V 4V @ 250µA 150nC @ 10V 3650pF @ 25V 10V ±20V
STP150NF04
RFQ
VIEW
RFQ
1,584
In-stock
STMicroelectronics MOSFET N-CH 40V 80A TO-220 STripFET™ II Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 300W (Tc) N-Channel - 40V 80A (Tc) 7 mOhm @ 40A, 10V 4V @ 250µA 150nC @ 10V 3650pF @ 25V 10V ±20V