Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
IRF640NL
RFQ
VIEW
RFQ
1,294
In-stock
Infineon Technologies MOSFET N-CH 200V 18A TO-262 HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 150W (Tc) N-Channel - 200V 18A (Tc) 150 mOhm @ 11A, 10V 4V @ 250µA 67nC @ 10V 1160pF @ 25V 10V ±20V
STP5NK90Z
RFQ
VIEW
RFQ
1,642
In-stock
STMicroelectronics MOSFET N-CH 900V 4.5A TO-220 SuperMESH™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 125W (Tc) N-Channel - 900V 4.5A (Tc) 2.5 Ohm @ 2.25A, 10V 4.5V @ 100µA 41.5nC @ 10V 1160pF @ 25V 10V ±30V
AOI9N50
RFQ
VIEW
RFQ
1,649
In-stock
Alpha & Omega Semiconductor Inc. MOSFET N-CH 500V 9A TO251A - Active Tube MOSFET (Metal Oxide) -50°C ~ 150°C (TJ) Through Hole TO-251-3 Stub Leads, IPak TO-251A 178W (Tc) N-Channel - 500V 9A (Tc) 860 mOhm @ 4.5A, 10V 4.5V @ 250µA 24nC @ 10V 1160pF @ 25V 10V ±30V
IRF640NSPBF
RFQ
VIEW
RFQ
2,877
In-stock
Infineon Technologies MOSFET N-CH 200V 18A D2PAK HEXFET® Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 150W (Tc) N-Channel - 200V 18A (Tc) 150 mOhm @ 11A, 10V 4V @ 250µA 67nC @ 10V 1160pF @ 25V 10V ±20V
64-0007
RFQ
VIEW
RFQ
2,643
In-stock
Infineon Technologies MOSFET N-CH 200V 18A TO-220AB HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 150W (Tc) N-Channel - 200V 18A (Tc) 150 mOhm @ 11A, 10V 4V @ 250µA 67nC @ 10V 1160pF @ 25V 10V ±20V
IRF640NLPBF
RFQ
VIEW
RFQ
3,338
In-stock
Infineon Technologies MOSFET N-CH 200V 18A TO-262 HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 150W (Tc) N-Channel - 200V 18A (Tc) 150 mOhm @ 11A, 10V 4V @ 250µA 67nC @ 10V 1160pF @ 25V 10V ±20V
IRF640NPBF
RFQ
VIEW
RFQ
1,744
In-stock
Infineon Technologies MOSFET N-CH 200V 18A TO-220AB HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 150W (Tc) N-Channel - 200V 18A (Tc) 150 mOhm @ 11A, 10V 4V @ 250µA 67nC @ 10V 1160pF @ 25V 10V ±20V