Power Dissipation (Max) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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2SK1775-E
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1,144
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Renesas Electronics America MOSFET N-CH 900V 8A TO-3P - Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P 60W (Tc) N-Channel 900V 8A (Ta) 1.6 Ohm @ 4A, 10V 1730pF @ 10V 10V ±30V
2SK1342-E
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1,120
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Renesas Electronics America MOSFET N-CH 900V 6A TO-3P - Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P 100W (Tc) N-Channel 900V 8A (Ta) 1.6 Ohm @ 4A, 10V 1730pF @ 10V 10V ±30V