Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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SCT2120AFC
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1,274
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Rohm Semiconductor MOSFET N-CH 650V 29A TO-220AB - Active Tube SiCFET (Silicon Carbide) 175°C (TJ) Through Hole TO-220-3 TO-220AB 165W (Tc) N-Channel - 650V 29A (Tc) 156 mOhm @ 10A, 18V 4V @ 3.3mA 61nC @ 18V 1200pF @ 500V 18V +22V, -6V
IPA80R280P7XKSA1
RFQ
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RFQ
3,531
In-stock
Infineon Technologies MOSFET N-CH 800V 17A TO220 CoolMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220-3F 30W (Tc) N-Channel Super Junction 800V 17A (Tc) 280 mOhm @ 7.2A, 10V 3.5V @ 360µA 36nC @ 10V 1200pF @ 500V 10V ±20V
IPW80R280P7XKSA1
RFQ
VIEW
RFQ
3,119
In-stock
Infineon Technologies MOSFET N-CH 800V 17A TO247 CoolMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247-3 101W (Tc) N-Channel Super Junction 800V 17A (Tc) 280 mOhm @ 7.2A, 10V 3.5V @ 360µA 10nC @ 10V 1200pF @ 500V 10V ±20V
IPP80R280P7XKSA1
RFQ
VIEW
RFQ
930
In-stock
Infineon Technologies MOSFET N-CH 800V 17A TO220 CoolMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 PG-TO-220-3 101W (Tc) N-Channel Super Junction 800V 17A (Tc) 280 mOhm @ 7.2A, 10V 3.5V @ 360µA 36nC @ 10V 1200pF @ 500V 10V ±20V
IPAN80R280P7XKSA1
RFQ
VIEW
RFQ
3,460
In-stock
Infineon Technologies MOSFET N-CH 800V COOLMOS TO220-3 CoolMOS™ P7 Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack PG-TO220 Full Pack 30W (Tc) N-Channel - 800V 17A (Tc) 280 mOhm @ 7.2A, 10V 3.5V @ 360µA 36nC @ 10V 1200pF @ 500V 10V ±20V