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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	FQA5N90_F109	RFQ VIEW	PDF RFQ	933 In-stock	ON Semiconductor	MOSFET N-CH 900V 5.8A TO-3P		QFET®	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-3P-3, SC-65-3	TO-3PN	185W (Tc)	N-Channel	-	900V	5.8A (Tc)	2.3 Ohm @ 2.9A, 10V	5V @ 250µA	40nC @ 10V	1550pF @ 25V	10V	±30V
	FQAF5N90	RFQ VIEW	PDF RFQ	1,475 In-stock	ON Semiconductor	MOSFET N-CH 900V 4.1A TO-3PF		QFET®	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	SC-94	TO-3PF	90W (Tc)	N-Channel	-	900V	4.1A (Tc)	2.3 Ohm @ 2.05A, 10V	5V @ 250µA	40nC @ 10V	1550pF @ 25V	10V	±30V
	FQA5N90	RFQ VIEW	PDF RFQ	2,950 In-stock	ON Semiconductor	MOSFET N-CH 900V 5.8A TO-3P		QFET®	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-3P-3, SC-65-3	TO-3P	185W (Tc)	N-Channel	-	900V	5.8A (Tc)	2.3 Ohm @ 2.9A, 10V	5V @ 250µA	40nC @ 10V	1550pF @ 25V	10V	±30V
	FQP5N90	RFQ VIEW	PDF RFQ	3,939 In-stock	ON Semiconductor	MOSFET N-CH 900V 5.4A TO-220		QFET®	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3	158W (Tc)	N-Channel	-	900V	5.4A (Tc)	2.3 Ohm @ 2.7A, 10V	5V @ 250µA	40nC @ 10V	1550pF @ 25V	10V	±30V
	TK12A55D(STA4,Q,M)	RFQ VIEW	PDF RFQ	2,036 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 550V 12A TO-220SIS		π-MOSVII	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220SIS	45W (Tc)	N-Channel	-	550V	12A (Ta)	570 mOhm @ 6A, 10V	4V @ 1mA	28nC @ 10V	1550pF @ 25V	10V	±30V
	TK13A50DA(STA4,Q,M	RFQ VIEW	PDF RFQ	896 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 500V 12.5A TO-220SIS		π-MOSVII	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220SIS	45W (Tc)	N-Channel	-	500V	12.5A (Ta)	470 mOhm @ 6.3A, 10V	4V @ 1mA	28nC @ 10V	1550pF @ 25V	10V	±30V
	TK11A60D(STA4,Q,M)	RFQ VIEW	PDF RFQ	2,804 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 11A TO-220SIS		π-MOSVII	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220SIS	45W (Tc)	N-Channel	-	600V	11A (Ta)	650 mOhm @ 5.5A, 10V	4V @ 1mA	28nC @ 10V	1550pF @ 25V	10V	±30V
	FQPF5N90	RFQ VIEW	PDF RFQ	1,442 In-stock	ON Semiconductor	MOSFET N-CH 900V 3A TO-220F		QFET®	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220F	51W (Tc)	N-Channel	-	900V	3A (Tc)	2.3 Ohm @ 1.5A, 10V	5V @ 250µA	40nC @ 10V	1550pF @ 25V	10V	±30V
	STP35NF10	RFQ VIEW	PDF RFQ	1,982 In-stock	STMicroelectronics	MOSFET N-CH 100V 40A TO-220		STripFET™ II	Not For New Designs	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220AB	115W (Tc)	N-Channel	-	100V	40A (Tc)	35 mOhm @ 17.5A, 10V	4V @ 250µA	55nC @ 10V	1550pF @ 25V	10V	±20V

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