- Manufacture :
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- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
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2 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
|
VIEW |
1,958
In-stock
|
Sanken | MOSFET N-CH 100V 18A TO-220F | - | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220F | 32W (Tc) | N-Channel | - | 100V | 18A (Tc) | 48 mOhm @ 11.9A, 10V | 2.5V @ 350µA | 23nC @ 10V | 1530pF @ 25V | 4.5V, 10V | ±20V | |||
|
VIEW |
837
In-stock
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Infineon Technologies | MOSFET N-CH 100V 7.3A 8-SOIC | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 100V | 7.3A (Ta) | 22 mOhm @ 4.4A, 10V | 4V @ 250µA | 51nC @ 10V | 1530pF @ 25V | 10V | ±20V | |||
