Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRFR2605
RFQ
VIEW
RFQ
893
In-stock
Infineon Technologies MOSFET N-CH 55V 19A D-PAK HEXFET® Obsolete Tube MOSFET (Metal Oxide) - Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 50W (Tc) N-Channel - 55V 19A (Tc) 85 mOhm @ 11A, 10V 4V @ 250µA 23nC @ 10V 420pF @ 25V 10V ±20V
IRFL4315
RFQ
VIEW
RFQ
1,235
In-stock
Infineon Technologies MOSFET N-CH 150V 2.6A SOT223 HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 2.8W (Ta) N-Channel - 150V 2.6A (Ta) 185 mOhm @ 1.6A, 10V 5V @ 250µA 19nC @ 10V 420pF @ 25V 10V ±30V
SPP03N60S5HKSA1
RFQ
VIEW
RFQ
3,693
In-stock
Infineon Technologies MOSFET N-CH 600V 3.2A TO-220AB CoolMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 PG-TO220-3-1 38W (Tc) N-Channel - 600V 3.2A (Tc) 1.4 Ohm @ 2A, 10V 5.5V @ 135µA 16nC @ 10V 420pF @ 25V 10V ±20V
SPU03N60S5BKMA1
RFQ
VIEW
RFQ
1,541
In-stock
Infineon Technologies MOSFET N-CH 600V 3.2A TO-251 CoolMOS™ Last Time Buy Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA PG-TO251-3 38W (Tc) N-Channel - 600V 3.2A (Tc) 1.4 Ohm @ 2A, 10V 5.5V @ 135µA 16nC @ 10V 420pF @ 25V 10V ±20V
IRFL4315PBF
RFQ
VIEW
RFQ
2,599
In-stock
Infineon Technologies MOSFET N-CH 150V 2.6A SOT223 HEXFET® Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 2.8W (Ta) N-Channel - 150V 2.6A (Ta) 185 mOhm @ 1.6A, 10V 5V @ 250µA 19nC @ 10V 420pF @ 25V 10V ±30V