Supplier Device Package :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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TK3R1A04PL,S4X
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Toshiba Semiconductor and Storage X35 PB-F POWER MOSFET TRANSISTOR U-MOSIX-H Active Tube MOSFET (Metal Oxide) 175°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 36W (Tc) N-Channel - 40V 82A (Tc) 3.8 mOhm @ 30A, 4.5V 2.4V @ 500µA 63.4nC @ 10V 4670pF @ 20V 4.5V, 10V ±20V
TK3R1E04PL,S1X
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Toshiba Semiconductor and Storage X35 PB-F POWER MOSFET TRANSISTOR U-MOSIX-H Active Tube MOSFET (Metal Oxide) 175°C (TJ) Through Hole TO-220-3 TO-220 87W (Tc) N-Channel - 40V 100A (Tc) 3.8 mOhm @ 30A, 4.5V 2.4V @ 500µA 63.4nC @ 10V 4670pF @ 20V 4.5V, 10V ±20V