Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IPP050N06N G
RFQ
VIEW
RFQ
604
In-stock
Infineon Technologies MOSFET N-CH 60V 100A TO-220 OptiMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 PG-TO-220-3 300W (Tc) N-Channel 60V 100A (Tc) 5 mOhm @ 100A, 10V 4V @ 270µA 167nC @ 10V 6100pF @ 30V 10V ±20V
IPI120N08S403AKSA1
RFQ
VIEW
RFQ
1,912
In-stock
Infineon Technologies MOSFET N-CH TO262-3 Automotive, AEC-Q101, OptiMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3-1 278W (Tc) N-Channel 80V 120A (Tc) 2.8 mOhm @ 100A, 10V 4V @ 223µA 167nC @ 10V 11550pF @ 25V 10V ±20V
IPP120N08S403AKSA1
RFQ
VIEW
RFQ
780
In-stock
Infineon Technologies MOSFET N-CH TO220-3 Automotive, AEC-Q101, OptiMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 PG-TO220-3-1 278W (Tc) N-Channel 80V 120A (Tc) 2.8 mOhm @ 100A, 10V 4V @ 223µA 167nC @ 10V 11550pF @ 25V 10V ±20V
PSMN7R8-120ESQ
RFQ
VIEW
RFQ
3,946
In-stock
Nexperia USA Inc. MOSFET N-CH 120V 70A I2PAK - Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK 349W (Tc) N-Channel 120V 70A (Tc) 7.9 mOhm @ 25A, 10V 4V @ 1mA 167nC @ 10V 9473pF @ 60V 10V ±20V
PSMN7R8-120PSQ
RFQ
VIEW
RFQ
978
In-stock
Nexperia USA Inc. MOSFET N-CH 120V 70A TO-220AB - Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK 349W (Tc) N-Channel 120V 70A (Tc) 7.9 mOhm @ 25A, 10V 4V @ 1mA 167nC @ 10V 9473pF @ 60V 10V ±20V