Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IXTP02N120P
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1,254
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IXYS MOSFET N-CH 1200V 0.2A TO-220 Polar™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 33W (Tc) N-Channel - 1200V 200mA (Tc) 75 Ohm @ 100mA, 10V 4V @ 100µA 4.7nC @ 10V 104pF @ 25V 10V ±20V
IXTY02N120P
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1,962
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IXYS MOSFET N-CH 1200V 0.2A DPAK Polar™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252, (D-Pak) 33W (Tc) N-Channel - 1200V 200mA (Tc) 75 Ohm @ 500mA, 10V 4V @ 100µA 4.7nC @ 10V 104pF @ 25V 10V ±20V
IPS70R1K4P7SAKMA1
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2,497
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Infineon Technologies MOSFET N-CHANNEL 700V 4A TO251 CoolMOS™ P7 Active Tube MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Through Hole TO-251-3 Stub Leads, IPak PG-TO251 22.7W (Tc) N-Channel - 700V 4A (Tc) 1.4 Ohm @ 700mA, 10V 3.5V @ 40µA 4.7nC @ 10V 158pF @ 400V 10V ±16V