- Manufacture :
- Part Status :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
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2 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | |||||||||||||||||||||||||
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VIEW |
2,978
In-stock
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Infineon Technologies | MOSFET NCH 100V 128A TO247AC | Automotive, AEC-Q101, HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | 278W (Tc) | N-Channel | - | 100V | 128A (Tc) | 6 mOhm @ 77A, 10V | 4V @ 150µA | 188nC @ 10V | 7120pF @ 50V | 10V | ±20V | |||
|
VIEW |
3,630
In-stock
|
STMicroelectronics | MOSFET N-CH 650V 59A TO-247 | FDmesh™ II | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-247-3 | 350W (Tc) | N-Channel | - | 650V | 49A (Tc) | 65 mOhm @ 24.5A, 10V | 5V @ 250µA | 188nC @ 10V | 6200pF @ 50V | 10V | ±25V | |||
