Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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AUIRLS3114Z
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RFQ
2,990
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Infineon Technologies MOSFET N-CH 40V 42A D2PAK HEXFET® Discontinued at Digi-Key Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-PAK (TO-252AA) 143W (Tc) N-Channel 40V 56A (Tc) 4.9 mOhm @ 56A, 10V 2.5V @ 100µA 53nC @ 4.5V 3617pF @ 25V 10V ±16V
IRF8252PBF
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RFQ
3,300
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Infineon Technologies MOSFET N-CH 25V 25A 8-SO HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel 25V 25A (Ta) 2.7 mOhm @ 25A, 10V 2.35V @ 100µA 53nC @ 4.5V 5305pF @ 13V 4.5V, 10V ±20V
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RFQ
665
In-stock
STMicroelectronics N-CHANNEL 30 V, 2 MOHM TYP., 120 - Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220 176.5W (Tc) N-Channel 30V 120A (Tc) 2.4 mOhm @ 60A, 10V 2.5V @ 250µA 53nC @ 4.5V 5200pF @ 25V 4.5V, 10V ±20V