Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IXTY2R4N50P
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628
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IXYS MOSFET N-CH 500V 2.4A DPAK PolarHV™ Last Time Buy Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252, (D-Pak) 55W (Tc) N-Channel 500V 2.4A (Tc) 3.75 Ohm @ 500mA, 10V 5.5V @ 25µA 6.1nC @ 10V 240pF @ 25V 10V ±30V
IXTP2R4N50P
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VIEW
RFQ
1,500
In-stock
IXYS MOSFET N-CH 500V 2.4A TO-220 PolarHV™ Last Time Buy Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 55W (Tc) N-Channel 500V 2.4A (Tc) 3.75 Ohm @ 500mA, 10V 5.5V @ 25µA 6.1nC @ 10V 240pF @ 25V 10V ±30V
TSM1NB60CH C5G
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RFQ
3,790
In-stock
Taiwan Semiconductor Corporation MOSFET N-CHANNEL 600V 1A TO251 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA TO-251 (IPAK) 39W (Tc) N-Channel 600V 1A (Tc) 10 Ohm @ 500mA, 10V 4.5V @ 250µA 6.1nC @ 10V 138pF @ 25V 10V ±30V