Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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MMIX1F360N15T2
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2,448
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IXYS MOSFET N-CH 150V 235A GigaMOS™, TrenchT2™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount 24-PowerSMD, 21 Leads 24-SMPD 680W (Tc) N-Channel - 150V 235A (Tc) 4.4 mOhm @ 100A, 10V 5V @ 8mA 715nC @ 10V 47500pF @ 25V 10V ±20V
IXFK360N15T2
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3,463
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IXYS MOSFET N-CH 150V 360A TO264 GigaMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-264-3, TO-264AA TO-264AA (IXFK) 1670W (Tc) N-Channel - 150V 360A (Tc) 4 mOhm @ 60A, 10V 5V @ 8mA 715nC @ 10V 47500pF @ 25V 10V ±20V
IXFX360N15T2
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RFQ
2,872
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IXYS MOSFET N-CH 150V 360A PLUS247 GigaMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 PLUS247™-3 1670W (Tc) N-Channel - 150V 360A (Tc) 4 mOhm @ 60A, 10V 5V @ 8mA 715nC @ 10V 47500pF @ 25V 10V ±20V
IXFN360N15T2
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2,912
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IXYS MOSFET N-CH 150V 310A SOT227 GigaMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Chassis Mount SOT-227-4, miniBLOC SOT-227B 1070W (Tc) N-Channel - 150V 310A (Tc) 4 mOhm @ 60A, 10V 5V @ 8mA 715nC @ 10V 47500pF @ 25V 10V ±20V