Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IXFK44N50F
RFQ
VIEW
RFQ
2,452
In-stock
IXYS-RF MOSFET N-CH 500V 44A TO264 HiPerRF™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-264-3, TO-264AA TO-264 (IXFK) 500W (Tc) N-Channel - 500V 44A (Tc) 120 mOhm @ 22A, 10V 5.5V @ 4mA 156nC @ 10V 5500pF @ 25V 10V ±20V
PSMN009-100P,127
RFQ
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RFQ
1,158
In-stock
Nexperia USA Inc. MOSFET N-CH 100V 75A TO220AB TrenchMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 230W (Tc) N-Channel - 100V 75A (Tc) 8.8 mOhm @ 25A, 10V 4V @ 1mA 156nC @ 10V 8250pF @ 25V 10V ±20V
IXTL2N450
RFQ
VIEW
RFQ
1,736
In-stock
IXYS MOSFET N-CH 4500V 2A I5PAK - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole ISOPLUSi5-Pak™ ISOPLUSi5-Pak™ 220W (Tc) N-Channel - 4500V 2A (Tc) 23 Ohm @ 1A, 10V 6V @ 250µA 156nC @ 10V 6900pF @ 25V 10V ±20V
CSD19506KCS
RFQ
VIEW
RFQ
833
In-stock
Texas Instruments MOSFET N-CH 80V TO-220-3 NexFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220-3 375W (Tc) N-Channel - 80V 100A (Ta) 2.3 mOhm @ 100A, 10V 3.2V @ 250µA 156nC @ 10V 12200pF @ 40V 6V, 10V ±20V