Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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PHP45N03LTA,127
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RFQ
1,953
In-stock
NXP USA Inc. MOSFET N-CH 25V 40A TO220AB TrenchMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 65W (Tc) N-Channel - 25V 40A (Tc) 21 mOhm @ 25A, 10V 2V @ 1mA 19nC @ 5V 700pF @ 25V 3.5V, 10V ±20V
SUP70N03-09BP-E3
RFQ
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RFQ
1,829
In-stock
Vishay Siliconix MOSFET N-CH 30V 70A TO220AB TrenchFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 93W (Tc) N-Channel - 30V 70A (Tc) 9 mOhm @ 30A, 10V 2V @ 250µA 19nC @ 5V 1500pF @ 25V 4.5V, 10V ±20V
IPUH6N03LA G
RFQ
VIEW
RFQ
1,550
In-stock
Infineon Technologies MOSFET N-CH 25V 50A IPAK OptiMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA PG-TO251-3 71W (Tc) N-Channel - 25V 50A (Tc) 6.2 mOhm @ 50A, 10V 2V @ 30µA 19nC @ 5V 2390pF @ 15V 4.5V, 10V ±20V
IPSH6N03LA G
RFQ
VIEW
RFQ
3,962
In-stock
Infineon Technologies MOSFET N-CH 25V 50A IPAK OptiMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-251-3 Stub Leads, IPak PG-TO251-3 71W (Tc) N-Channel - 25V 50A (Tc) 6.2 mOhm @ 50A, 10V 2V @ 30µA 19nC @ 5V 2390pF @ 15V 4.5V, 10V ±20V
FQE10N20LCTU
RFQ
VIEW
RFQ
2,122
In-stock
ON Semiconductor MOSFET N-CH 200V 4A TO-126 QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-225AA, TO-126-3 TO-126 12.8W (Tc) N-Channel - 200V 4A (Tc) 360 mOhm @ 2A, 10V 2V @ 250µA 19nC @ 5V 490pF @ 25V 5V, 10V ±20V