- Manufacture :
- Mounting Type :
- Package / Case :
- Supplier Device Package :
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- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
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13 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | |||||||||||||||||||||||||
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VIEW |
2,083
In-stock
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Microsemi Corporation | MOSFET N-CH 1000V 23A SOT-227 | POWER MOS 8™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | ISOTOP® | 545W (Tc) | N-Channel | 1000V | 23A (Tc) | 380 mOhm @ 18A, 10V | - | 305nC @ 10V | 9835pF @ 25V | 10V | ±30V | |||
|
VIEW |
615
In-stock
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IXYS | MOSFET N-CH 1000V 37A SOT-227B | Polar™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | SOT-227B | 890W (Tc) | N-Channel | 1000V | 37A (Tc) | 220 mOhm @ 22A, 10V | 6.5V @ 1mA | 305nC @ 10V | 19000pF @ 25V | 10V | ±30V | |||
|
VIEW |
3,969
In-stock
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Microsemi Corporation | MOSFET N-CH 800V 47A T-MAX | POWER MOS 8™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 Variant | T-MAX™ [B2] | 1135W (Tc) | N-Channel | 800V | 47A (Tc) | 210 mOhm @ 24A, 10V | 5V @ 2.5mA | 305nC @ 10V | 9330pF @ 25V | 10V | ±30V | |||
|
VIEW |
2,238
In-stock
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IXYS | MOSFET N-CH 1000V 22A I5-PAK | HiPerFET™, PolarP2™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS264™ | ISOPLUS264™ | 357W (Tc) | N-Channel | 1000V | 22A (Tc) | 240 mOhm @ 22A, 10V | 6.5V @ 1mA | 305nC @ 10V | 19000pF @ 25V | 10V | ±30V | |||
|
VIEW |
2,073
In-stock
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Microsemi Corporation | MOSFET N-CH 1000V 35A TO264 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | TO-264 [L] | 1135W (Tc) | N-Channel | 1000V | 35A (Tc) | 400 mOhm @ 18A, 10V | 5V @ 2.5mA | 305nC @ 10V | 9835pF @ 25V | 10V | ±30V | |||
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|
VIEW |
3,030
In-stock
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Microsemi Corporation | MOSFET N-CH 1000V 35A T-MAX | POWER MOS 8™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 Variant | T-MAX™ [B2] | 1135W (Tc) | N-Channel | 1000V | 35A (Tc) | 380 mOhm @ 18A, 10V | 5V @ 2.5mA | 305nC @ 10V | 9835pF @ 25V | 10V | ±30V | |||
|
VIEW |
1,718
In-stock
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IXYS | MOSFET N-CH 1000V 44A PLUS264 | HiPerFET™, PolarP2™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | PLUS264™ | 1250W (Tc) | N-Channel | 1000V | 44A (Tc) | 220 mOhm @ 22A, 10V | 6.5V @ 1mA | 305nC @ 10V | 19000pF @ 25V | 10V | ±30V | |||
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|
VIEW |
1,143
In-stock
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Microsemi Corporation | MOSFET N-CH 800V 44A TO-264 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | TO-264 | 1135W (Tc) | N-Channel | 800V | 47A (Tc) | 240 mOhm @ 24A, 10V | 5V @ 2.5mA | 305nC @ 10V | 9330pF @ 25V | 10V | ±30V | |||
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VIEW |
2,575
In-stock
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Microsemi Corporation | MOSFET N-CH 1000V 25A SOT-227 | POWER MOS 8™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | ISOTOP® | 545W (Tc) | N-Channel | 1000V | 25A (Tc) | 330 mOhm @ 18A, 10V | 5V @ 2.5mA | 305nC @ 10V | 9835pF @ 25V | 10V | ±30V | |||
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|
VIEW |
3,254
In-stock
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Microsemi Corporation | MOSFET N-CH 800V 48A T-MAX | POWER MOS 8™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 Variant | T-MAX™ [B2] | 1135W (Tc) | N-Channel | 800V | 49A (Tc) | 190 mOhm @ 24A, 10V | 5V @ 2.5mA | 305nC @ 10V | 9330pF @ 25V | 10V | ±30V | |||
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|
VIEW |
3,075
In-stock
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Microsemi Corporation | MOSFET N-CH 1000V 37A T-MAX | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 Variant | T-MAX™ [B2] | 1135W (Tc) | N-Channel | 1000V | 37A (Tc) | 330 mOhm @ 18A, 10V | 5V @ 2.5mA | 305nC @ 10V | 9835pF @ 25V | 10V | ±30V | |||
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VIEW |
790
In-stock
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Microsemi Corporation | MOSFET N-CH 800V 48A TO-264 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | TO-264 [L] | 1135W (Tc) | N-Channel | 800V | 49A (Tc) | 200 mOhm @ 24A, 10V | 5V @ 2.5mA | 305nC @ 10V | 9330pF @ 25V | 10V | ±30V | |||
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|
VIEW |
1,759
In-stock
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Microsemi Corporation | MOSFET N-CH 1000V 37A TO-264 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | TO-264 | 1135W (Tc) | N-Channel | 1000V | 37A (Tc) | 330 mOhm @ 18A, 10V | 5V @ 2.5mA | 305nC @ 10V | 9835pF @ 25V | 10V | ±30V | |||
